Datasheet 2sb1194 Datasheet

Inchange Semiconductor Product Specification

固电半导体

INCHANGE SEMICONDUCTOR

Silicon PNP Power Transistors 2SB1194

DESCRIPTION

·With TO-220Fa package

·High DC current gain

·High speed switching

·DARLINGTON

·Complement to type 2SD1633

APPLICATIONS

·For power switching applications

PINNING

PIN DESCRIPTION

1

2 Collector

3 Emitter

Base

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings(Ta=25

SYMBOL PARAMETER CONDITIONS VALUE UNIT

V

Collector-base voltage Open emitter -100 V

CBO

V

Collector -emitter voltage Open base -100 V

CEO

V

Emitter-base voltage Open collector -7 V

EBO

IC Collector current -5 A

ICM Collector current-peak -8 A

IB Base current -0.5 A

℃)

Ta=25℃

PC Collector power dissipation

TC=25℃

Tj Junction temperature 150

T

Storage temperature -55~150

stg

2

W

30

℃

℃

Inchange Semiconductor Product Specification

固电半导体

INCHANGE SEMICONDUCTOR

Silicon PNP Power Transistors 2SB1194

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

I

V

CEO(SUS)

Collector-emitter sustaining voltage

=-0.2A; RBE=∞

C

-100 V

V

CEsat

V

BEsat

I

CBO

I

CEO

I

EBO

hFE DC current gain IC=-3A ; VCE=-3V 1500 10000

Switching times

ton Turn-on time 3.0

t

stg

tf Fall time

Collector-emitter saturation voltage I

Base-emitter saturation voltage IC=-3A ;IB=-3mA -2.0 V

Collector cut-off current VCB=-100V; IE=0 -100

Collector cut-off current VCE=-100V; IB=0 -100

Emitter cut-off current VEB=-7V; IC=0 -5 mA

Storage time 5.0

=-3A ;IB=-3mA -1.5 V

C

μA

μA

μs

=-3A ;IB1=-IB2=-3mA

I

C

V

=-50V

CC

3.0

μs

μs

 h

Classifications

FE

Q P

1500-6000 4000-10000

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Inchange Semiconductor Product Specification

固电半导体

INCHANGE SEMICONDUCTOR

Silicon PNP Power Transistors 2SB1194

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)

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