Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1193
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·High speed switching
·DARLINGTON
·Complement to type 2SD1773
APPLICATIONS
·For medium speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -120 V
CBO
V
Collector -emitter voltage Open base -120 V
CEO
V
Emitter-base voltage Open collector -7 V
EBO
IC Collector current -8 A
ICM Collector current-peak -12 A
PC Collector power dissipation
℃)
Ta=25℃
TC=25℃
2
W
50
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1193
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
CEO(SUS)
Collector-emitter sustaining voltage
=-2A; RBE=∞;L=10mH
C
-120 V
V
Switching times
Emitter-base breakdown voltage IE=-50mA; IC=0 -7 V
(BR)EBO
V
Collector-emitter saturation voltage IC=-4A ;IB=-8mA -1.5 V
CEsat-1
V
Collector-emitter saturation voltage IC=-8A ;IB=-80mA -3.0 V
CEsat-2
V
Base-emitter saturation voltage IC=-4A ;IB=-8mA -2.0 V
BEsat-1
V
Base-emitter saturation voltage IC=-8A ;IB=-80mA -3.5 V
BEsat-2
I
Collector cut-off current VCB=-120V; IE=0 -100
CBO
V
I
Collector cut-off current
CEO
hFE DC current gain IC=-4A ; VCE=-3V 1000 20000
ton Turn-on time 0.7
=-100V; RBE=∞
CE
-10
μA
μA
μs
t
Storage time 3.5
stg
tf Fall time
2
I
=-4A ;IB1=-IB2=-8mA
C
=-50V
V
CC
2.0
μs
μs
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1193
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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