Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1192
DESCRIPTION
·With TO-220Fa package
·High V
·Large P
·Complement to type 2SD1770
APPLICATIONS
·Power amplifier
·TV vertical deflection output
PINNING
PIN DESCRIPTION
CEO
C
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -1 A
ICM Collector current-peak -2 A
PC Collector power dissipation
Collector-base voltage Open emitter -200 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -6 V
Ta=25℃ 2
W
T
=25℃ 25
C
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1192
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=-5mA , B=0 -150 V
(BR)CEO
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 35 pF
fT Transition frequency IC=-100mA ; VCE=-10V 20 MHz
Emitter-base breakdown voltage IE=-0.5mA ,IC=0 -6 V
Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.0 V
Base-emitter on voltage IC=-300mA ; VCE=-10V -1.0 V
Collector cut-off current VCB=-200V; IE=0 -50 μA
Emitter cut-off current VEB=-4V; IC=0 -50 μA
DC current gain IC=-100mA ; VCE=-10V 60 240
DC current gain IC=-300mA ; VCE=-10V 50
h
Classifications
FE-1
Q P
60-140 100-240
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1192
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.15 mm)
3
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