Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1186A
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation votlage
·Complement to type 2SD1763A
·High breakdown voltage
APPLICATIONS
·For use in low frequency power
amplifer applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -160 V
CBO
V
Collector -emitter voltage Open base -160 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -1.5 A
ICM Collector current-peak -3.0 A
PC Collector power dissipation
℃)
Ta=25℃
=25℃
T
C
2.0
W
20
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1186A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=-0.1A ; VCE=-5V 60 200
fT Transition frequency IC=-0.1A; VCE=-5V 50 MHz
COB Collector output capacitance IE=0;f=1MHz ; VCB=-10V 30 pF
Collector-emitter breakdown voltage IC=-1mA; IB=0 -160 V
Collector-base breakdown voltage IC=-50μA; IE=0 -160 V
Emitter-base breakdown voltage IE=-50μA; IC=0 -5 V
Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -2.0 V
Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.5 V
Collector cut-off current VCB=-120V; IE=0 -1.0 μA
Emitter cut-off current VEB=-4V; IC=0 -1.0 μA
h
Classifications
FE
D E
60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1186A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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