Page 1
2SB1260 / 2SB1181 / 2SB1241
Transistors
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
Features
!
1) High breakdown voltage and high
current.
CEO
BV
= −80V, IC=−1A
2) Good h
3) Low V
FE
CE(sat)
linearity.
.
4) Complements the 2SD1898 /
2SD1863 / 2SD1733.
Structure
!!!!
External dimensions
!!!!
2SB1260
0.5±0.1
±0.3
−0.1
+0.2
2.5
4.0
1.0±0.2
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings
!!!!
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
*1 Single pulse, Pw=100ms
*2 When mounted on a 40×40×0.7 mm ceramic board.
Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
*3
2SB1260
2SB1241, 2SB1181
2SB1181
(Ta=25°C)
ROHM : MPT3
EIAJ : SC-62
2SB1241
0.65Max.
(1)
ROHM : ATV
* Denotes h
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
CP
I
P
C
Tj
Tstg
0.4±0.1
1.5±0.1
6.8±0.2
(2)
2.54
FE
+0.2
4.5
−0.1
1.6±0.1
(3)(2)(1)
0.5±0.1
0.4±0.1
1.5±0.1
3.0±0.2
Abbreviated
symbol: BH
0.9
1.0
0.5±0.1
(3)
2.54
-80 V
-80
-5
-1
0.5
2
1
10
150
-55~+150
(Units : mm)
+0.2
1.5
−0.1
0.4
(1) Base
(2) Collector
(3) Emitter
∗
2.5±0.2
4.4±0.2
14.5±0.5
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
A(DC)
A(Pulse)-2
W(Tc=25˚C)
V
V
W
˚C
˚C
+0.1
−0.05
2SB1181
6.5
0.3
±
5.1
1.5
0.1
−
+0.3
5.5
0.75
0.9
(1)
ROHM : CPT3
EIAJ : SC-63
*1
*2
*3
±
+0.2
−
(2)
+0.2
0.1
2.3
−
0.1
±
0.1
0.5
1.5
0.55
±
0.1
1.0
±
0.2
(1) Base
(2) Collector
(3) Emitter
0.5
±
9.5
2.5
0.2
C0.5
0.1
0.9
0.65
±
2.3±0.22.3±0.2
(3)
Page 2
Transistors
Electrical characteristics
!!!!
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
(Ta=25°C)
2SB1241
2SB1260, 2SB1241
2SB1181
BV
BV
BV
V
Cob
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
T
f
2SB1260 / 2SB1181 / 2SB1241
Min.
Typ. Max. Unit Conditions
C
-80
-80
-5
-
-
-
822SB1260, 2SB1181
-
-
-
-
-
-
-1
-
-
-1
-
-0.4
-
390
120 - 390 -
- 100 - VCE=-5V, IE=50mA, f=30MHzMHz
100
-
25
-
-
MHz
-
=-50µA
VI
I
C
=-1mA
V
I
E
=-50µA
V
CB
V
µA
EB
V
µA
C/IB
I
V
V
CE
V
CE
V
CB
pF
=-60V
=-4V
=-500mA/-50mA
=-3V, IC=-0.1A
=-10V, IE=50mA, f=30MHz
=-10V, IE=0A, f=1MHz
Packaging specifications and h
!!!!
Package
Code
Basic ordering
h
FE
Type
2SB1260
2SB1241
2SB1181
unit (pieces)
PQR
QR
PQR
hFE values are classified as follows :
Item P Q R
FE
h
Electrical characteristic curves
!!!!
-1000
(mA)
C
-100
-10
-1
COLLECTOR CURRENT : I
-0.1
0
Fig.1 Grounded emitter propagation
82~180 120~270 180~390
Ta=25˚C
V
-0.2 -0.4 -1.0 -1.4-0.6
BASE TO EMITTER VOLTAGE : V
-0.8 -1.2 -1.6
characteristics
CE
=-5V
BE
FE
TL
2500 2500 1000
-
-
-1.0
(mA)
C
-0.8
-0.6
-0.4
-0.2
COLLECTOR CURRENT : I
0
0
(V)
COLLECTOR TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter output
Taping
TV2
T100
-
-
-
-0.4 -0.8 -1.2 -1.6
-
characteristics
Ta=25˚C
-0.45mA
-0.4mA
-0.35mA
-0.3mA
-0.25mA
-0.2mA
-0.15mA
-0.1mA
-0.05mA
IB=0mA
1000
500
FE
200
100
50
DC CURRENT GAIN : h
20
-2.0-0.2 -0.6 -1.0 -1.4 -1.8
CE
(V)
10
-1 -2 -5 -10 -20 -50-100-200 -500 -2000
COLLECTOR CURRENT : IC (mA)
Ta=25˚C
VCE=-3V
-1V
-1 000
Fig.3 DC current gain vs.
collector current
Page 3
Transistors
2SB1260 / 2SB1181 / 2SB1241
(V)
CE(sat)
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
COLLECTOR SATURATION VOLTAGE : V
-0.01
-1 -2 -5 -10 -20 -50-100-200-500 -2000-1 000
IC/IB=20
10
COLLECTOR CURRENT : I
Ta=25˚C
C
Fig.4 Collector-emitter saturation
voltage vs. collector current
1000
(pF)
500
200
100
50
20
EMITTER INPUT CAPACITANCE : Cib
10
-0.1
-0.2 -0.5 -1 -2
EMITTER TO BASE VOLTAGE : V
Ta=25˚C
f=1MHz
I
Fig. 7 Emitter input capacitance
vs. emitter-base voltage
(mA)
C
=0A
-5 -10
EB
1000
500
(MHz)
T
200
100
TRANSITION FREQUENCY : f
(A)
C
-0.5
-0.2
-0.1
COLLECTOR CURRENT : I
-0.05
(V)
Ta=25˚C
V
CE
=-5V
50
20
10
5
2
1
1 2 5 10 20 50 100 200 5001000
E
EMITTER CURRENT : I
(mA)
Fig.5 Gain bandwidth product vs.
emitter current
DC
Ta=25˚C
Single
*
nonrepetitive
pulse
P
W
=
P
W
=100ms
10ms
I
C Max
. (Pulse)
-2
I
C Max
.
-1
-0.5 -2 -1 -5 -10 -20 -50 -100
COLLECTOR TO EMITTER VOLTAGE : V
Fig. 8 Safe operating area
(2SB1260)
pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (
(A)
C
500m
200m
100m
COLLECTOR CURRENT : I
CE
(V)
1000
500
200
100
50
20
10
5
2
1
-0.2-0.1 -0.5-1 -2 -5 -10 -20 -50 -100
COLLECTOR TO BASE VOLTAGE : VCB
Ta=25˚C
f=1MHz
IE
=0A
Fig.6 Collector output capacitance
vs. collector-base voltage
10
5
I
C Max
. (Pulse)
2
DC
1
50m
20m
10m
5m
Printed circuit board:
*
1.7 mm thick with collector
2m
copper plating at least 1 cm
1m
COLLECTOR TO EMITTER VOLTAGE : V
12 50.1 0.2 0.5 10 20 50 100200 5001000
P
W
=100ms
Ta=25˚C
*
nonrepetitive
P
pulse
W
=10ms
2
.
Single
CE
Fig.9 Safe operating area (2SB1241)
(V)
(V)
-5
-2
(A)
C
-1
-0.5
-0.2
-0.1
-0.05
COLLECTOR CURRENT : I
-0.02
-0.01
-0.5-0.2-0.1 -1 -2 -20-10-5 -50-100
COLLECTOR TO EMITTER VOLTAGE : V
Fig.10 Safe operating area
(2SB1181)
Ta=25˚C
Single
*
nonrepetitive
pulse
P
W
=100ms
CE
(V)
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