Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1163
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD1718
·Excellent linearity of h
·Wide area of safe operation (ASO)
·High transition frequency f
APPLICATIONS
·For high power amplifier applications
PINNING
PIN DESCRIPTION
FE
T
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -15 A
ICM Collector current-peak -25 A
PC Collector power dissipation
Collector-base voltage Open emitter -180 V
Collector-emitter voltage Open base -180 V
Emitter-base voltage Open collector -5 V
3.5
W
TC=25℃ 150
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1163
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=-10A ;IB=-1A -2.5 V
CEsat
V
Base-emitter on voltage IC=-8A ; VCE=-5V -1.8 V
BE
I
Collector cut-off current VCB=-180V; IE=0 -50 μA
CBO
I
Emitter cut-off current VEB=-3V; IC=0 -50 μA
EBO
h
DC current gain IC=-20mA ; VCE=-5V 20
FE-1
h
DC current gain IC=-1A ; VCE=-5V 60 200
FE-2
h
DC current gain IC=-8A ; VCE=-5V 20
FE-3
fT Transition frequency IC=-0.5A ; VCE=-5V 20 MHz
COB Collector output capacitance f=1MHz;VCB=-10V 230 pF
h
classifications
FE-2
Q S P
60-100 80-160 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1163
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
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