Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1161
DESCRIPTION ·
·With TO-3PFa package
·Complement to type 2SD1716
·High f
·Wide area of safe operation
APPLICATIONS
·For high power amplifier applications
PINNING
T
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -12 A
ICP Collector current-peak -20 A
PC Collector power dissipation
Collector-base voltage Open emitter -160 V
Collector-emitter voltage Open base -160 V
Emitter-base voltage Open collector -5 V
℃)
TC=25℃ 120
W
=25℃ 3
T
a
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1161
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -2.0 V
CEsat
VBE Base-emitter on voltage IC=-8A ; VCE=-5V -1.8 V
I
Collector cut-off current VCB=-160V; IE=0 -50 μA
CBO
I
Emitter cut-off current VEB=-3V; IC=0 -50 μA
EBO
h
DC current gain IC=-20mA ; VCE=-5V 20
FE-1
h
DC current gain IC=-1A ; VCE=-5V 60 200
FE -2
h
DC current gain IC=-8A ; VCE=-5V 20
FE -3
COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 420 pF
fT Transition frequency IC=-0.5A ; VCE=-5V 20 MHz
h
classifications
FE-2
Q S P
60-120 80-160 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1161
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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