Page 1
Po wer Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
Features
■
●
Low collector to emitter saturation voltage V
●
Satisfactory linearity of foward current transfer ratio h
●
Large collector current I
●
Full-pack package which can be installed to the heat sink with
C
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
–130
–80
–7
–30
–20
100
3
150
–55 to +150
FE
Unit
W
˚C
˚C
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
21.0±0.516.2±0.5
3.5 0.715.0±0.2
V
V
V
12.5
Solder Dip
10.9±0.5
A
2.0±0.2
1.1±0.1
5.45±0.3
321
A
TOP–3 Full Pack Package(a)
5.0±0.2
3.2
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
=25˚C)
VCB = –100V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
VCE = –2V, IC = –10A
IC = –8A, IB = – 0.4A
IC = –20A, IB = –2A
IC = –8A, IB = – 0.4A
IC = –20A, IB = –2A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –3A, IB1 = – 0.8A, IB2 = 0.8A,
VCC = –50V
Rank Q P
h
FE2
90 to 180 130 to 260
Note: Ordering can be made by the common rank (PQ rank h
Conditions
= 90 to 260) in the rank classification.
FE2
min
–80
45
90
30
typ
25
0.5
1.2
0.2
max
–10
–50
260
– 0.5
–1.5
–1.5
–2.5
Unit
µA
µA
V
V
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SB1156
PC—Ta IC—V
200
)
W
(
160
C
120
80
40
Collector power dissipation P
0
0 15012510025 7550
)
V
(
–10
CE(sat)
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –30–10–1– 0.3 –3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P
=3W)
C
(1)
(2)
(3)
Ambient temperature Ta (˚C
V
CE(sat)—IC
IC/IB=10
TC=100˚C
25˚C
–25˚C
Collector current IC (A
)
)
CE
–20
–16
)
A
(
C
–12
–8
Collector current I
–4
0
0 –12–10–8–2 –6–4
IB=–300mA
–200mA
TC=25˚C
–140mA
–100mA
–80mA
–60mA
–40mA
–20mA
Collector to emitter voltage VCE (V
V
BE(sat)—IC
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
TC=–25˚C
100˚C
25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
IC/IB=10
)
V
)
V
(
–10
CE(sat)
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –30–10–1– 0.3 –3
)
CE(sat)—IC
Collector current IC (A
hFE—I
1000
FE
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
Forward current transfer ratio h
1
– 0.1 –30–10–1– 0.3 –3
Collector current IC (A
I
(1) I
=10
/
C
B
=20
(2) I
C/IB
T
=25˚C
C
(2)
(1)
)
C
VCE=–2V
)
1000
300
)
MHz
100
(
T
30
10
3
1
Transition frequency f
0.3
0.1
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
2
fT—I
C
– 0.3 –3
VCE=–10V
f=10MHz
=25˚C
T
C
)
ton, t
10
)
3
t
µs
(
f
,t
stg
,t
on
Switching time t
stg
1
t
on
t
f
0.3
0.1
0.03
0.01
0–8–2 –6–4 –7–1 –5–3
Collector current IC (A
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=10
I
C/IB
)
(–I
B1=IB2
=–50V
V
CC
T
=25˚C
C
Area of safe operation (ASO)
–100
I
CP
–30
I
C
)
–10
A
(
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
)
Collector to emitter voltage VCE (V
Non repetitive pulse
T
=25˚C
C
DC
t=1ms
10ms
)
Page 3
Po wer Transistors 2SB1156
R
—t
th(t)
=10V × 0.3A (3W) and without heat sink
T
=10V × 1A (10W) and with a 100 × 100 × 2mm Al heat sink
T
(1)
10
)
˚C/W
(
10
(t)
th
3
2
(1) P
(2) P
10
1
Thermal resistance R
–1
10
–3
10
–2
10
(2)
–1
110
Time t (s
10 10
)
2
10
3
4
10
3
Loading...