Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1151
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SD1691
·Low saturation voltage
·Large current
·High total power dissipation:P
·Large current capability and wide SOA
APPLICATIONS
·DC-DC converter
·Driver of solenoid or motor
PINNING
PIN DESCRIPTION
=1.3W
T
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -5 A
ICM Collector current-Peak -8 A
IB Base current -1 A
PD Total power dissipation
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -7 V
℃)
Ta=25℃ 1.3
W
TC=25℃ 20
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1151
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=-2.0A ;IB=-0.2A -0.3 V
CEsat
V
Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -1.2 V
BEsat
I
Collector cut-off current VCB=-50V; IE=0 -10 μA
CBO
I
Emitter cut-off current VEB=-7V; IC=0 -10 μA
EBO
h
DC current gain IC=-0.1A ; VCE=-1V 60
FE-1
h
DC current gain IC=-2A ; VCE=-1V 100 400
FE-2
h
DC current gain IC=-5A ; VCE=-2V 50
FE-3
Switching times
ton Turn-on time 0.15 1.0 μs
t
Storage time 0.78 2.5 μs
stg
tf Fall time
h
Classifications
FE-2
IC=-2A; IB1=-IB2=-0.2A
RL=5.0Ω;VCC≈10V
0.18 1.0 μs
M L K
100-200 160-320 200-400
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1151
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1151
4
Loading...