Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1149
DESCRIPTION
·With TO-126 package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2)
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -3.0 A
ICM Collector current-peak -5.0 A
PD Total power dissipation
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -8 V
℃)
Ta=25℃ 1.3
=25℃ 15
T
C
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1149
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=-1.5A ;IB=-1.5mA -0.9 -1.2 V
CEsat
V
Base-emitter saturation voltage IC=-1.5A ;IB=-1.5mA -1.5 -2.0 V
BEsat
I
Collector cut-off current VCB=-100V; IE=0 -10 μA
CBO
I
Emitter cut-off current VEB=-5V; IC=0 -2.0 mA
EBO
h
DC current gain IC=-1.5A ; VCE=-2V 2000 15000
FE-1
h
DC current gain IC=-3A ; VCE=-2V 1000
FE-2
Switching times
ton Turn-on time 0.5 μs
=-1.5A ; IB1=-IB2=-1.5mA
I
t
Storage time 2.0 μs
stg
tf Fall time
h
Classifications
FE-1
C
VCC≈-40V;RL=27Ω
1.0 μs
M L K
2000-5000 3000-7000 5000-15000
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1149
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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