Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1145
DESCRIPTION
·With TO-220F package
·High DC current gain.
·DARLINGTON
·Low collector saturation voltage
APPLICATIONS
·For high current driver and power
driver applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -3 A
ICM Collector current-peak -5 A
PC Collector dissipation
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -6 V
TC=25℃
=25℃
T
a
20
W
2
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1145
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gain IC=-1.5A ; VCE=-3V 2000
Collector-base breakdown voltage IC=-100μA; IE=0 -120 V
Collector-emitter breakdown voltage IC=-5mA; IB=0 -120 V
Collector-emitter saturation voltage IC=-1.5A ; IB=-3mA -1.5 V
Base-emitter saturation voltage IC=-1.5A ; IB=-3mA -2.0 V
Collector cut-off current VCB=-120V;IE=0 -50 μA
Emitter cut-off current VEB=-5V;IC=0 -3.0 mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1145
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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