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2SB1132
Elektronische Bauelemente
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-1A, -40V
FEATURES
Low power dissipation 0.5W
CLASSIFICATION OF hFE
Product Rank
Range
Marking
2SB1132-P 2SB1132-Q 2SB1132-R
82~180 120~270 180~390
BAP BAQ BAR
SOT-89
A
E
4
1
2
3
C
DB
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-89 1K 7’ inch
Collector
Base
Emitter
F G
KH
J
REF.
Millimeter Millimeter
Min. Max.
A 4.40 4.60 G 0.40 0.58
B 3.94 4.25 H 1.50 TYP
C 1.40 1.60 J 3.00 TYP
D 2.30 2.60 K 0.32 0.52
E 1.50 1.70 L 0.35 0.44
F 0.89
1.2
L
REF.
Min. Max.
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current (DC) IC -1 A
Collector Power Dissipation PC 500 mW
Junction & Storage Temperature TJ, T
= 25°C unless otherwise specified)
A
-40 V
CBO
-32 V
CEO
-5 V
EBO
150, -55~150 °C
STG
Unit
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain hFE 82 - 390 VCE= -3V, IC= -100mA
(T
= 25°C unless otherwise specified)
A
-40
(BR)CBO
-32 - - V IC= -1mA, IB=0
(BR)CEO
-5 - - V IE= -50μA, IC=0
(BR)EBO
CBO
- - -0.5 μA VEB= -4V, IC=0
EBO
-
- - V IC= -50μA, IE=0
- -0.5 μA VCB= -20V, IE=0
Collector-emitter saturation voltage V
Transition frequency fT - 150 - MHz
- -0.2 -0.5 V IC= -500mA, IB= -50mA
CE(sat)
V
= -5V, IC= -50mA,
CE
f=30MHz
Collector output capacitance Cob - 20 30 pF VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
02-Nov-2012 Rev. C Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SB1132
PNP Silicon Medium Power Transistor
-1A, -40V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
02-Oct-2012 Rev. C Page 2 of 2
Page 3
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