Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1105
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC durrent gain
·Complement to type 2SD1605
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current-DC -3 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -7 V
℃)
TC=25℃
30 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1105
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=-25mA, RBE=∞
C
-120 V
V
Emitter-base breakdown voltage IE=-50mA, IC=0 -7 V
(BR)EBO
V
Collector-emitter saturation voltage IC=-1.5A ,IB=-3mA -1.5 V
CEsat-1
V
Collector-emitter saturation voltage IC=-3A ,IB=-30mA -3.0 V
CEsat-2
V
Base-emitter saturation voltage IC=-1.5A ,IB=-3mA -2.0 V
BEsat-1
V
Base-emitter saturation voltage IC=-3A ,IB=-30mA -3.5 V
BEsat-2
I
Collector cut-off current VCB=-120V, IE=0 -100
CBO
V
I
Collector cut-off current
CEO
h
DC current gain IC=-1.5A ; VCE=-3V 1000
FE
VD Diode forward voltage ID=-3A 3.0 V
=-100V, RBE=∞
CE
-10
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1105
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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