Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1103
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC durrent gain
·Low collector saturation voltage
·Complement to type 2SD1603
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current-DC -8 A
ICM Collector current-peak -12 A
PC Collector power dissipation
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -7 V
℃)
TC=25℃
40 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1103
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=-25mA, RBE=∞
C
-60 V
V
Switching times
Emitter-base breakdown voltage IE=-50mA, IC=0 -7 V
(BR)EBO
V
Collector-emitter saturation voltage IC=-4A ,IB=-8mA -1.5 V
CEsat-1
V
Collector-emitter saturation voltage IC=-8A ,IB=-80mA -3.0 V
CEsat-2
V
Base-emitter saturation voltage IC=-4A ,IB=-8mA -2.0 V
BEsat-1
V
Base-emitter saturation voltage IC=-8A ,IB=-80mA -3.5 V
BEsat-2
I
Collector cut-off current VCB=-60V, IE=0 -100
CBO
V
I
Collector cut-off current
CEO
h
DC current gain IC=-4A ; VCE=-3V 1000
FE
VD Diode forward voltage ID=8A 3.0 V
=-50V, RBE=∞
CE
-10
μA
μA
ton Turn-on time 0.5
t
Storage time 3.0
stg
tf Fall time
2
IC=-4A ,IB1=-IB2=-8mA
1.0
μs
μs
μs
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1103
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...