Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1101
DESCRIPTION
·With TO-220 package
·Complement to type 2SD1601
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -4 A
ICM Collector current-peak -8 A
PC Collector power dissipation TC=25℃ 40 W
Collector-base voltage Open emitter -60 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -7 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1101
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
V
Collector-emitter breakdown voltage IC=-25mA ,IB=0 -60 V
(BR)CEO
(BR)EBO
CEsat -1
CEsat -2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEO
hFE DC current gain IC=-2A ; VCE=-3V 1000 20000
VD Diode forward voltage ID=4A; 3.0 V
Emitter-base breakdown voltage IE=-50mA ,IC=0 -7 V
Collector-emitter saturation voltage IC=-2A; IB=-4mA -1.5 V
Collector-emitter saturation voltage IC=-4A; IB=-40mA -3.0 V
Base-emitter saturation voltage IC=-2A; IB=-4mA -2.0 V
Base-emitter saturation voltage IC=-4A; IB=-40mA -3.5 V
Collector cut-off current VCB=-60V; IE=0 -100 μA
Collecto cut-off current VCE=-50V; RBE=∞ -10 μA
Switching times
ton
ts
tf
Turn-on time 0.8
Storage time 4.0
Fall time
2
I
=-2A IB1=-IB2=-4mA
C
1.0
μs
μs
μs
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1101
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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