Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1098
DESCRIPTION
·With TO-220F package
·Complement to type 2SD1589
·DARLINGTON
·High DC current gain
APPLICATIONS
·Low speed switching industrial use
·Low frequency power amplifier
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -5 A
ICM Collector current-peak -8 A
IB Base current -0.5 A
PC Collector dissipation
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -7 V
℃)
Ta=25℃ 2
W
TC=25℃ 20
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1098
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=-3A; IB=-3mA -1.5 V
CEsat
V
Base-emitter saturation voltage IC=-3A; IB=-3mA -2.0 V
BEsat
I
Collector cut-off current VCB=-100V ;IE=0 -1 μA
CBO
I
Emitter cut-off current VEB=-5V; IC=0 -3 mA
EBO
h
DC current gain IC=-3A ; VCE=-2V 2000 15000
FE-1
h
DC current gain IC=-5A ; VCE=-2V 500
FE-2
Switching times
Turn-on time 0.5 μs
Storage time 1 μs
Fall time
Classifications
h
ton
ts
tf
FE-1
R O Y
2000-5000 3000-7000 5000-15000
=-3A ;IB1=-IB2=-3mA
I
C
=17Ω;VCC=-50V;
R
L
1 μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1098
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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