Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1097
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation voltage
·Complement to type 2SD1588
APPLICATIONS
·For low frequency power amplifier and
low speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -80 V
CBO
V
Collector -emitter voltage Open base -60 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -7 A
PC Collector power dissipation
℃)
Ta=25℃
T
=25℃
C
2.0
W
30
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1097
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
h
Collector-emitter breakdown voltage IC=-30mA; IB=0 -60 V
Collector-base breakdown voltage IC=-1mA; IE=0 -80 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -0.5 V
Base-emitter saturation voltage IC=-5A ;IB=-0.5A -1.5 V
Collector cut-off current VCB=-60V; IE=0 -10
Emitter cut-off current VEB=-5V; IC=0 -10
DC current gain IC=-3A ; VCE=-1V 40 200
Classifications
FE
μA
μA
M L K
40-80 60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1097
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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