Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1096
DESCRIPTION ·
·With TO-220Fa package
·High breakdown voltage
·Complement to type 2SD1587
APPLICATIONS
·For TV vertical output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -200 V
CBO
V
Collector -emitter voltage Open base -150 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -2 A
PC Collector power dissipation
℃)
Ta=25℃
T
=25℃
C
2.0
W
25
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1096
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=-0.4A ; VCE=-10V 40 200
fT Transition frequency IC=-0.4A; VCE=-10V 5 MHz
h
Collector-emitter breakdown voltage IC=-30mA; IB=0 -150 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-500mA ;IB=-50mA -1.0 V
Base-emitter saturation voltage IC=-500mA ;IB=-50mA -1.5 V
Collector cut-off current VCB=-150V; IE=0 -50
Emitter cut-off current VEB=-5V; IC=0 -50
Classifications
FE
μA
μA
M L K
40-80 60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1096
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Loading...