Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1094
DESCRIPTION ·
·With TO-220Fa package
·Complement to type 2SD1585
APPLICATIONS
·Ideal for power supplies or variety
or in audio and other equipment
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -60 V
CBO
V
Collector -emitter voltage Open base -60 V
CEO
V
Emitter-base voltage Open collector -7 V
EBO
IC Collector current -3 A
ICM Collector current-peak -5 A
IB Base current -0.6 A
℃)
Ta=25℃
PC Collector power dissipation
T
=25℃
C
Tj Junction temperature 150
T
Storage temperature -55~150
stg
2.0
W
15
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1094
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.1A; VCE=-5V 20 MHz
COB Collector output capacitance f=1MHz ; VCB=-10V 70 pF
h
Collector-emitter voltage IC=-30mA; IB=0 -60 V
Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V
Base-emitter saturation voltage IC=-2A ;IB=-0.2A -2.0 V
Collector cut-off current VCB=-60V; IE=0 -10 μA
Emitter cut-off current VEB=-7V; IC=0 -10 μA
DC current gain IC=-50mA ; VCE=-5V 20
DC current gain IC=-0.5A ; VCE=-5V 40 200
Classifications
FE-2
M L K
40-80 60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1094
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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