Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1087
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier and low
speed power switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -100 V
CBO
V
Collector-emitter voltage Open base -100 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current-DC -5 A
PC Collector power dissipation
℃)
Ta=25℃ 1.5
W
T
=25℃ 30
C
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1087
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter breakdown voltage IC=-30mA, IB=0 -100 V
(BR)CEO
V
Collector-emitter saturation voltage IC=-2A ,IB=-2mA -1.5 V
CEsat
V
Base-emitter saturation voltage IC=-2A ,IB=-2mA -2.0 V
BEsat
I
Collector cut-off current VCB=-100V, IE=0 1 μA
CBO
I
Emitter cut-off current VEB=-5V; IC=0 -3 mA
EBO
h
DC current gain IC=-2A , VCE=-5V 2000 20000
FE-1
h
DC current gain IC=-5A , VCE=-5V 500
FE-2
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1087
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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