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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1086A
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SD1563A
·Low collector saturation voltage
·Large current capability
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -1.5 A
ICM Collector current -peak -3.0 A
Collector-base voltage Open emitter -160 V
Collector-emitter voltage Open base -160 V
Emitter-base voltage Open collector -5 V
℃)
PD Total power dissipation TC=25℃ 10 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1086A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=-1mA ;IB=0 -160 V
(BR)CEO
I
(BR)CBO
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=-0.1A ; VCE=-5V 56 270
fT Transition frequency IC=-0.1A ; VCE=-5V 50 MHz
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=-1.0A ;IB=-0.1A -2.0 V
Base-emitter saturation voltage IC=-1.0A ;IB=-0.1A -1.5 V
Collector cut-off current VCB=-120V; IE=0 -1.0
Emitter cut-off current VEB=-4V; IC=0 -1.0
=-50μA ;IE=0
C
I
=-50μA ;IC=0
E
-160 V
-5 V
μA
μA
COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1086A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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