Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1085A
DESCRIPTION
·With TO-220 package
·Complement to type 2SD1562A
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -1.5 A
ICM Collector current-peak -3.0 A
PC Collector power dissipation
Collector-base voltage Open emitter -160 V
Collector-emitter voltage Open base -160 V
Emitter-base voltage Open collector -5 V
T
=25℃
C
20 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1085A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=-1mA ,IB=0 -160 V
(BR)CEO
I
(BR)CBO
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gain IC=-0.1A ; VCE=-5V 60 200
COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 30 pF
fT Transition frequency IC=-0.1A ; VCE=-5V 50 MHz
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=-1A; IB=-0.1A -2.0 V
Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.5 V
Collector cut-off current VCB=-120V; IE=0 -1.0
Emitter cut-off current VEB=-4V; IC=0 -1.0
=-50μA ,IE=0
C
I
=-50μA ,IC=0
E
-160 V
-5 V
μA
μA
hFE classifications
D E
60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1085A
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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