Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1075
DESCRIPTION ·
·With TO-126 package
·High collector-peak current
·Low collector saturation voltage
APPLICATIONS
·For audio frequency output
amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -2 A
ICM Collector current-Peak -4 A
PD Total power dissipation
Collector-base voltage Open emitter -50 V
Collector-emitt er voltage Open base -40 V
Emitter-base voltage Open collector -5 V
℃)
T
=25℃
a
1.2 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1075
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
hFE DC current gain IC=-1A ; VCE=-5V*2 50 220
fT Transition frequency IC=-0.5A ; VCE=-5V*2 150 MHz
COB Collector output capacitance IE=0; f=1MHz ; VCB=-20V 40 pF
Collector-emitter breakdown voltage IC=-2mA ;IB=0 -40 V
Collector-base breakdown voltage IC=-1mA ;IE=0 -50 V
Collector-emitter saturation voltage IC=-3.0A; IB=-0.3A*2 -1.0 V
Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A*2 -1.5 V
Collector cut-off current VCB=-50V; IE=0 -1
Collector cut-off current VCE=-10V; IE=0 -100
Emitter cut-off current VEB=-5V; IC=0 -10
μA
μA
μA
2
Note: *
pulse test
hFE Classifications
P Q R
50-100 80-160 120-220
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1075
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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