Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1069 2SB1069A
DESCRIPTION
·With TO-220 package
·High speed switching
·Low collector saturation voltage
APPLICATIONS
·For low-voltage switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SB1069 -40
V
CBO
V
CEO
V
EBO
IC Collector current -4 A
ICM Collector current-peak -8 A
Collector-base voltage
2SB1069A
2SB1069 -20
Collector-emitter voltage
2SB1069A
Emitter-base voltage Open collector -5 V
Open emitter
Open base
V
-50
V
-40
Ta=25℃
PC Collector power dissipation
=25℃
T
C
Tj Junction temperature 150
T
Storage temperature -55~150
stg
1.4
W
25
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1069 2SB1069A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.5A ; VCE=-5V 150 MHz
Switching times
ton Turn-on time 0.3 μs
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=-2A; IB=-0.1A -0.5 V
Base-emitter saturation voltage IC=-2A; IB=-0.1A -1.5 V
Collector cut-off current VCB=-40V; IE=0 -50 μA
Emitter cut-off current VEB=-5V; IC=0 -50 μA
DC current gain IC=-0.1A ; VCE=-2V 45
DC current gain IC=-1A ; VCE=-2V 60 260
2SB1069 -20
2SB1069A
=-10mA ,IB=0
I
C
-40
V
t
Storage time 0.4 μs
stg
tf Fall time
h
classifications
FE-2
R Q P
60-120 90-180 130-260
I
=-2A; IB1=-IB2=-0.2A
C
0.1 μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1069 2SB1069A
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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