Page 1
Application
Low frequency power amplifier
Outline
UPAK
3
2SB1028
Silicon PNP Epitaxial
1
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
Page 2
2SB1028
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
h
V
CBO
FE1
FE2
CE(sat)
voltage
Base to emitter voltage V
BE
Note: 1. The 2SB1028 is grouped by h
Mark EL EM
h
FE1
60 to 120 100 to 200
–180 — — V IC = –1 mA, IE = 0
–160 — — V IC = –10 mA, RBE = ∞
–5——V I
— — –10 µAVCB = –160 V, IE = 0
1
*
60 — 200 VCE = –5 V, IC = –0.15 A,
30 — — VCE = –5 V, IC = –0.5 A,
— — –1.0 V IC = –0.5 A, IB = –50 mA,
— — –0.9 V VCE = –5 V, IC = –0.15 A,
as follows.
FE1
–180 V
–160 V
–5 V
–1.5 A
–3 A
1W
= –1 mA, IC = 0
E
pulse
pulse
Pulse
pulse
2
Page 3
2SB1028
Maximum Collector Dissipation Curve
1.2
(W)
C
0.8
0.4
(on the alumina ceramic board)
Collector Power Dissipation P
0
50
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
–500
VCE = –5 V
Pulse
–100
(mA)
C
–10
100 150
25°C
–25°C
Ta = 75°C
–1.0
Typical Output Characteristics
–0.8
(A)
C
–0.6
–0.4
Collector Current I
–0.2
0
–10 –20
Collector to Emitter Voltage V
DC Current Transfer Ratio vs.
1,000
VCE = –5 V
FE
Pulse
300
100
–5.0
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5 mA
IB = 0
Collector Current
Pulse
–30 –40 –50
(V)
CE
Collector Current I
–1
0
–0.2 –0.4
Base to Emitter Voltage V
–0.6 –0.8 –1.0
(V)
BE
30
DC Current Transfer Ratio h
10
–10
–30 –100
Collector Current I
–300 –1,000
(mA)
C
3
Page 4
2SB1028
Collector to Emitter Saturation Voltage
(V)
CE(sat)
–10
vs. Collector Current
IC = 10 I
B
Pulse
–1.0
–0.1
–0.01
–1
Collector to Emitter Saturation Voltage V
–10
Collector Current I
–100 –1,000
(mA)
C
100
(pF)
ob
30
1,000
(MHz)
T
300
100
30
Gain Bandwidth Product f
10
–10
Collector Output Capacitance
vs. Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
VCE = –5 V
Pulse
–30 –100
Collector Current I
C
–300 –1,000
(mA)
10
3
Collector Output Capacitance C
1
–1
–3 –10
Collector to Base Voltage V
IE = 0
f = 1 MHz
–30 –100
(V)
CB
4
Page 5
Unit: mm
0.53 Max
0.48 Max
4.5 ± 0.1
1.8 Max
1.5
1.5
3.0
1.5 ± 0.1
0.4
φ
1
0.44 Max
(1.5)
(2.5)
2.5 ± 0.1
4.25 Max
0.44 Max
(0.4)
(0.2)
0.8 Min
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
UPAK
—
Conforms
0.050 g
Page 6
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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