Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor 2SB1024
DESCRIPTION
·Low Collector Saturation Voltage : V
CE(sat)
·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -1A)
·Complement to Type 2SD1414
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= -1.5V(Max.)@ IC= -3A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -4 A
ICM Collector Current-Peak -6 A
IB Base Current-Continuous -0.3 A
PC
TJ
Collector-Base Voltage -100 V
Collector-Emitter Voltage -80 V
Emitter-Base Voltage -5 V
Collector Power Dissipation
=25℃
@T
a
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
2
W
20
℃
T
stg
Storage Temperature -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor 2SB1024
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -80 V
Collector-Emitter Saturation Voltage I
Base-Emitter Saturation Voltage I
= -3A; IB= -6mA -1.5 V
C
= -3A; IB= -6mA -2.0 V
C
Collector Cutoff Current VCB= -100V; IE= 0 -20
Emitter Cutoff Current VEB= -5V; IC= 0 -2.5 mA
DC Current Gain IC= -1A; VCE= -2V 2000
DC Current Gain IC= -3A; VCE= -2V 1000
Switching Times
ton
t
stg
Turn-on Time 0.15
Storage Time 0.80
VCC≈ -30V, RL= 10Ω,
= -3A; IB1= -IB2= -6mA,
I
C
μA
μs
μs
tf
Fall Time
0.40
isc Website：www.iscsemi.cn
2
μs
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