Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1020
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SD1415
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -100 V
CBO
V
Collector -emitter voltage Open base -100 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -7 A
IB Base current -0.2 A
PC Collector power dissipation
℃)
T
=25℃
C
30 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1020
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
ton Turn-on time 0.8
t
stg
Collector-emitter breakdown voltage IC=-50mA; IB=0 -100 V
Collector-emitter saturation voltage IC=-3A ;IB=-6mA -0.95 -1.5 V
Collector-emitter saturation voltage IC=-7A ;IB=-14mA -1.3 -2.0 V
Base-emitter saturation voltage IC=-3A ;IB=-6mA -1.55 -2.5 V
Collector cut-off current VCB=-100V; IE=0 -100
Emitter cut-off current VEB=-5V; IC=0 -4.0 mA
DC current gain IC=-3A ; VCE=-3V 2000 15000
DC current gain IC=-7A ; VCE=-3V 1000
=-IB2=-6mA
I
Storage time 2.0
B1
=-45V ,RL=15Ω
V
CC
μA
μs
μs
tf Fall time
2.5
μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1020
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Loading...