Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1019
DESCRIPTION
·With TO-220Fa package
·Low saturation voltage
·Complement to type 2SD1412
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -70 V
CBO
V
Collector -emitter voltage Open base -50 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -7 A
IB Base current -1 A
PC Collector power dissipation
℃)
Ta=25℃
TC=25℃
2
W
30
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1019
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-1A ; VCE=-4V 10 MHz
COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF
Switching times
Collector-emitter breakdown voltage IC=-50mA; IB=0 -50 V
Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -0.2 -0.4 V
Base-emitter saturation voltage IC=-4A ;IB=-0.4A -0.9 -1.2 V
Collector cut-off current VCB=-70V; IE=0 -30
Emitter cut-off current VEB=-5V; IC=0 -50
DC current gain IC=-1A ; VCE=-1V 70 240
DC current gain IC=-4A ; VCE=-1V 30
μA
μA
ton Turn-on time 0.2
ts Storage time 2.5
tf Fall time
h
Classifications
FE-1
O Y
70-140 120-240
=10Ω
R
L
=-IB2=-0.3A
I
B1
V
=-30V
CC
0.5
μs
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1019
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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