Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1018
DESCRIPTION
·With TO-220F package
·High collector current
·Low collector saturation voltage
·Complement to type 2SD1411
APPLICATIONS
·Power amplifier applications
·High current switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -100 V
CBO
V
Collector -emitter voltage Open base -80 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -7 A
IB Base current -1 A
PC Collector power dissipation
℃)
TC=25℃
Ta=25℃
30
W
2
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1018
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency VCE=-4V;IC=-1A 10 MHz
COB Collector output capacitance f=1MHz ; VCB=-10V;IE=0 250 pF
Switching times
ton Turn-on time 0.4
t
stg
Collector-emitter breakdownvoltage IC=-50mA; IB=0 -80 V
Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -0.3 -0.5 V
Base-emitter saturation voltage IC=-4A ;IB=-0.4A -0.9 -1.4 V
Collector cut-off current VCB=-100V; IE=0 -5
Emitter cut-off current VEB=-5V; IC=0 -5
DC current gain IC=-1A ; VCE=-1V 70 240
DC current gain IC=-4A ; VCE=-1V 30
=-IB2=-0.3A
I
Storage time 2.5
B1
=30V ,RL=10Ω
V
CC
μA
μA
μs
μs
tf Fall time
h
Classifications
FE-1
O Y
70-140 120-240
2
0.5
μs
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1018
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1018
4
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