Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1015
DESCRIPTION ·
·With TO-220Fa package
·Collector power dissipation
=25W@TC=25℃
:P
C
·Low collector saturation voltage
·Complement to type 2SD1406
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -60 V
CBO
V
Collector-emitter voltage Open base -60 V
CEO
V
Emitter-base voltage Open collector -7 V
EBO
IC Collector current -3 A
IB Base current -0.5 A
PC Collector power dissipation
℃)
Ta=25℃
TC=25℃
2.0
W
25
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1015
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(BR)
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.5A; VCE=-5V 9 MHz
COB Collector output capacitance f=1MHz ; VCB=-10V 150 pF
Switching times
ton Trun-on time 0.4
ts Storage time 1.7
tf Fall time
Collector-emitter breakdown voltage IC=-50mA; IB=0 -60 V
Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.7 V
Base-emitter voltage IC=-0.5A ;VCE=-5V -1.0 V
Collector cut-off current VCB=-60V; IE=0 -100
Emitter cut-off current VEB=-7V; IC=0 -100
DC current gain IC=-0.5A ; VCE=-5V 60 200
DC current gain IC=-3A ; VCE=-5V 20
R
=15Ω;VCC=-30V
L
=-IB2=-0.2A
I
B1
Duty cycle≤1%
0.5
μA
μA
μs
μs
μs
h
Classifications
FE-1
O Y
60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1015
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1015
4
Loading...