Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1009
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SD1380
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -2 A
PD Total power dissipation
Collector-base voltage Open emitter -40 V
Collector-emitter voltage Open base -32 V
Emitter-base voltage Open collector -5 V
℃)
Ta=25℃ 0.1
T
=25℃ 10
C
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1009
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-500mA ; VCE=-5V 100 MHz
COB Collector output capacitance f=1MHz ; VCB=-10V 50 pF
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -32 V
Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.8 V
Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -2.0 V
Collector cut-off current VCB=-20V; IE=0 -1
Emitter cut-off current VEB=-3V; IC=0 -1
DC current gain IC=-20mA ; VCE=-5V 40
DC current gain IC=-500mA ; VCE=-5V 82 390
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB1009
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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