Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SB1007
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Good Linearity of h
·Complement to Type 2SD1378
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= -80V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -0.7 A
PC
TJ Junction Temperature 150
T
stg
Collector-Base Voltage -80 V
Collector-Emitter Voltage -80 V
Emitter-Base Voltage -5 V
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Storage Temperature Range -55~150
10
W
1
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SB1007
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(
I
CBO
I
EBO
h
FE
Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -80 V
Collector-Emitter Breakdown Voltage IC= -2mA; IB= 0 -80 V
Emitter-Base Breakdown Vltage IE= -50μA; IC=0 -5 V
Collector-Emitter Saturation Voltage I
)
sat
= -500mA; IB= -50mA -0.4 V
C
Collector Cutoff Current VCB= -50V; IE= 0 -0.5 μA
Emitter Cutoff Current VEB= -4V; IC= 0 -0.5 μA
DC Current Gain IC= -100mA; VCE= -3V 82 390
fT Current-Gain—Bandwidth Product IC= -50mA; VCE= -10V 100 MHz
COB Output Capacitance
I
= 0; VCB= -10V, f
E
= 1MHz
test
14 pF
h
Classifications
FE
P Q R
82-180 120-270 180-390
isc Website：www.iscsemi.cn
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