Page 1
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SB954, 2SB954A
Silicon PNP epitaxial planar type
For power amplification
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
●
Low collector to emitter saturation voltage V
●
Full-pack package which can be installed to the heat sink with
CE(sat)
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB954
2SB954A
2SB954
2SB954A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Ratings
–60
–80
–60
–80
–5
–2
–1
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
FE1
70 to 150 120 to 250
Rank Q P
h
2SB954
2SB954A
2SB954
2SB954A
2SB954
2SB954A
C
Symbol
I
CEO
I
CES
I
EBO
V
CEO
*
h
FE1
h
FE2
V
CE(sat)
V
BE
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = – 0.2A
VCE = –4V, IC = –1A
IC = –1A, IB = – 0.125A
VCE = –4V, IC = –1A
VCE = –5V, IC = – 0.2A, f = 10MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –50V
min
–60
–80
70
15
typ
30
0.5
1.2
0.3
max
–300
–300
–200
–200
–1
250
–1
–1.3
Unit
µA
µA
mA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SB954, 2SB954A
PC—Ta IC—V
50
)
W
(
40
C
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
–100
V
(
–30
CE(sat)
–10
–3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
(1)
(2)
(3)
(4)
V
CE(sat)—IC
IC/IB=10
CE
–2.5
–2.0
)
A
(
C
–1.5
–1.0
Collector current I
– 0.5
0
0–6–5–4–1 –3–2
)
Collector to emitter voltage VCE (V
10000
3000
FE
1000
300
TC=100˚C
IB=–40mA
hFE—I
TC=25˚C
–30mA
–25mA
–20mA
–10mA
–8mA
–6mA
–4mA
–2mA
)
C
VCE=–4V
25˚C
–10
–8
)
A
(
C
–6
–4
Collector current I
–2
0
0 –2.0–1.6– 0.4 –1.2– 0.8
Base to emitter voltage VBE (V
10000
3000
)
MHz
1000
(
T
300
IC—V
TC=100˚C
fT—I
25˚C
BE
–25˚C
C
=–4V
V
CE
VCE=–5V
f=10MHz
T
=25˚C
C
)
–1
25˚C
– 0.3
=100˚C
T
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
Collector current IC (A
C
–25˚C
– 0.1 –1 –10
– 0.3 –3
)
100
30
10
Forward current transfer ratio h
3
1
– 0.01
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
Area of safe operation (ASO) R
–100
–30
)
–10
A
(
C
–3
I
CP
–1
I
C
– 0.3
– 0.1
Collector current I
– 0.03
Non repetitive pulse
=25˚C
T
C
t=10ms
DC
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
100
30
10
Transition frequency f
3
1
– 0.01
)
—t
th(t)
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
(1)
(2)
)
– 0.01
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
2
–2
10
–4
10
)
–3
–2
10
–1
10
110
Time t (s
1010
)
2
10
3
4
10
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