Page 1
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SB943
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1268
Features
■
●
Low collector to emitter saturation voltage V
●
Satisfactory linearity of foward current transfer ratio h
●
Large collector current I
●
Full-pack package which can be installed to the heat sink with
C
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
–55 to +150
=25˚C)
C
Ratings
–130
–80
–7
–6
–3
30
2
150
CE(sat)
FE
Unit
W
˚C
˚C
Unit: mm
V
V
V
A
A
TO–220 Full Pack Package(a)
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
FE2
90 to 180 130 to 260
Rank Q P
h
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = –100V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = – 0.5A
IC = –2A, IB = – 0.1A
IC = –2A, IB = – 0.1A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = – 0.5A,
IB1 = –50mA, IB2 = 50mA
min
–80
45
90
typ
30
0.3
1.1
0.3
max
–10
–50
260
– 0.5
–1.5
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SB943
PC—Ta IC—V
50
)
W
(
40
C
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
(1)
(2)
(3)
(4)
V
BE(sat)—IC
TC=–100˚C
–25˚C
25˚C
IC/IB=20
CE
)
–6
–5
)
A
(
–4
C
–3
–2
Collector current I
–1
0
0108264
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
300
TC=100˚C
100
30
–25˚C
TC=25˚C
IB=–100mA
–80mA
–60mA
–40mA
–30mA
–20mA
–16mA
–12mA
–8mA
–4mA
C
VCE=–2V
25˚C
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
)
10000
3000
)
MHz
1000
(
T
300
100
30
V
CE(sat)—IC
TC=100˚C
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
fT—I
C
VCE=–10V
f=10MHz
T
C
IC/IB=20
25˚C
)
=25˚C
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
10000
)
pF
3000
(
ob
1000
300
100
– 0.01
30
10
3
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
Cob—V
CB
IE=0
f=1MHz
T
=25˚C
C
)
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
10
Forward current transfer ratio h
3
1
– 0.01
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
0 –3.2– 0.8 –2.4–1.6
)
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
ton, t
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=10
I
C/IB
(–I
B1=IB2
V
=–50V
CC
=25˚C
T
C
Collector current IC (A
)
)
t
stg
t
on
t
f
)
10
Transition frequency f
3
1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
Area of safe operation (ASO)
–100
–30
)
–10
A
(
I
CP
C
–3
I
C
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
10ms
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=0.5ms
1ms
DC
)
)
2
Page 3
Po wer Transistors 2SB943
R
—t
th(t)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
–2
10
–1
10
Time t (s
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
110
1010
2
10
3
4
10
)
3
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