Page 1
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SB941, 2SB941A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1266 and 2SD1266A
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
●
Low collector to emitter saturation voltage V
●
Full-pack package which can be installed to the heat sink with
one screw
CE(sat)
Unit: mm
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB941
2SB941A
2SB941
2SB941A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
FE1
70 to 150 120 to 250
Rank Q P
h
Symbol
2SB941
2SB941A
2SB941
2SB941A
2SB941
2SB941A
=25˚C)
C
Ratings
Unit
–60
V
CBO
–80
V
–60
V
CEO
V
EBO
I
CP
I
C
–80
–5
–5
–3
35
P
C
T
j
T
stg
C
2
150
–55 to +150
=25˚C)
Symbol
VCE = –60V, VBE = 0
I
CES
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
I
I
CEO
EBO
VCE = –60V, IB = 0
VEB = –5V, IC = 0
V
V
A
A
W
˚C
˚C
Conditions
min
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
typ
max
Unit
–200
µA
–200
–300
µA
–300
–1
mA
–60
V
h
FE1
h
FE2
V
V
f
T
t
on
t
stg
t
f
CEO
*
BE
CE(sat)
IC = –30mA, IB = 0
–80
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
70
10
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –10V, IC = – 0.5A, f = 10MHz
30
0.5
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
1.2
0.3
Note: Ordering can be made by the common rank (PQ rank h
250
–1.8
–1.2
= 70 to 250) in the
FE1
V
V
V
MHz
µs
µs
µs
rank classification.
1
Page 2
Po wer Transistors 2SB941, 2SB941A
PC—Ta IC—V
50
)
W
(
40
C
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
Collector current IC (A
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
(1)
(2)
(3)
(4)
V
CE(sat)—IC
TC=100˚C
–25˚C
25˚C
– 0.1 –1 –10
– 0.3 –3
)
IC/IB=10
)
CE
–6
–5
)
A
(
–4
C
–3
–2
IB=–100mA
TC=25˚C
–80mA
Collector current I
–1
0
0 –10–8–2 –6–4
–16mA
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
300
TC=100˚C
100
30
10
Forward current transfer ratio h
3
1
– 0.01
–25˚C
– 0.1 –1 –10
– 0.03
C
VCE=–4V
25˚C
– 0.3 –3
Collector current IC (A
–60mA
–40mA
–30mA
–20mA
–12mA
–8mA
–4mA
)
–10
–8
)
A
(
C
–6
–4
Collector current I
–2
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
3
1
– 0.01
IC—V
TC=100˚C
– 0.1 –1 –10
– 0.03
BE
25˚C
–25˚C
fT —I
C
– 0.3 –3
V
VCE=–5V
f=10MHz
T
Collector current IC (A
CE
=25˚C
C
=–4V
)
)
Area of safe operation (ASO) R
–100
–30
)
–10
A
(
I
CP
C
–3
I
C
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
Non repetitive pulse
=25˚C
T
C
t=1ms
10ms
DC
2SB941A
2SB941
Collector to emitter voltage VCE (V
)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
–2
–1
10
110
Time t (s
1010
)
2
10
3
4
10
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