Datasheet 2SB0939, 2SB0939A Datasheet (Panasonic)

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Page 1

Po wer Transistors

Note) The part numbers in the parenthesis show conventional part number.

2SB0939, 2SB0939A (2SB939, 2SB939A)

Silicon PNP epitaxial planar type Darlington

Unit: mm

For midium-speed power switching Complementary to 2SD1262 and 2SD1262A

Features

■

●

High foward current transfer ratio h

●

High-speed switching

●

N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage Collector to emitter voltage

2SB0939 2SB0939A 2SB0939

2SB0939A Emitter to base voltage Peak collector current Collector current Collector power dissipation

=25°C

Ta=25°C

Junction temperature Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff current Emitter cutoff current Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time

Rank classification

FE1

Rank Q P

FE1

2000 to 5000

Symbol

2SB0939 2SB0939A

4000 to 10000

V I

stg

CBO

CEO

EBO

=25˚C)

Ratings

–60 –80 –60 –80

–7

–12

–8 45

1.3

150

–55 to +150

=25˚C)

Symbol

h h V V f t t t

CBO

EBO

FE1

FE2

stg

CEO

CE(sat)

BE(sat)

VCB = –60V, IE = 0 VCB = –80V, IE = 0 VEB = –7V, IC = 0

IC = –30mA, IB = 0

VCE = –3V, IC = –4A VCE = –3V, IC = –8A IC = –4A, IB = –8mA IC = –4A, IB = –8mA VCE = –10V, IC = – 0.5A, f = 1MHz

IC = –4A, IB1 = –8mA, IB2 = 8mA, VCC = –50V

Internal Connection

Unit

V A A

˚C ˚C

Conditions

8.5±0.2

6.0±0.5

10.0±0.310.5min.

1.5max.

2.0 1.5±0.1

10.0±0.3

2.0

4.4±0.5

5.08±0.5 213

8.5±0.2

6.0±0.3

5.08±0.5

123

min

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

–0.4

1.5

typ

–60 –80

2000

500

0.5 2 1

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base 2:Collector 3:Emitter N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

R0.5 R0.5

1.1 max.

1:Base 2:Collector 3:Emitter N Type Package (DS)

max

–100 –100

4.4±0.5

0 to 0.4

Unit

µA

–2

10000

–1.5

–2

MHz

14.7±0.5

V V

µs µs µs

Page 2

Power Transistor 2SB0939, 2SB0939A

PC—Ta IC—V

(1)

) W

(

(2)

Collector power dissipation P

(3)

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

–100

(

–30

CE(sat)

–10

–3

–1

(1) TC=Ta (2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

=1.3W)

CE(sat)—IC

(1) IC/IB=250 (2) I (3) I T

C/IB C/IB

=25˚C

=500 =1000

–8

–7

)

–6

(

–5

–4

–3

–2

Collector current I

–1

0–5–4–1 –3–2

)

(3)

(2)

(1)

Collector to emitter voltage VCE (V

BE(sat)—IC

–100

) V

(

–30

BE(sat)

–10

–3

–1

TC=–25˚C

25˚C

100˚C

=–2.0mA

–1.8mA –1.6mA –1.4mA –1.2mA

–1.0mA

– 0.8mA

– 0.6mA

– 0.4mA

IC/IB=500

=25˚C

– 0.2mA

)

–100

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

Collector to emitter saturation voltage V

)

–100

) V

(

–30

BE(sat)

–10

–3

–1

CE(sat)—IC

TC=100˚C

– 0.1 –1 –10– 0.3 –3

Collector current IC (A

BE(sat)—IC

(1) (2) (3)

(1) I (2) I (3) I T

25˚C

IC/IB=500

C/IB C/IB C/IB

=25˚C

–25˚C

)

=250 =500 =1000

– 0.3

– 0.1

Collector to emitter saturation voltage V

– 0.1 –1 –10– 0.3 –3

Collector current IC (A

TC=100˚C

hFE—I

–25˚C

)

VCE=–3V

25˚C

Forward current transfer ratio h

– 0.1 –1 –10– 0.3 –3

Collector current IC (A

)

– 0.3

Base to emitter saturation voltage V

– 0.1

– 0.1 –1 –10– 0.3 –3

IE=0 f=1MHz

=25˚C

)

Collector current IC (A

Cob—V

10000

) pF

3000

(

1000

300

100

Collector output capacitance C

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector to base voltage VCB (V

– 0.3

Base to emitter saturation voltage V

– 0.1

– 0.1 –1 –10– 0.3 –3

Collector current IC (A

Area of safe operation (ASO)

–100

–30

)

–10

(

–3

–1

300ms

Collector current I

)

– 0.3

– 0.1

– 0.03

– 0.01

–1 –10 –100 –1000–3 –30 –300

Collector to emitter voltage VCE (V

)

Non repetitive pulse

=25˚C

t=1ms

10ms

2SB0939A

2SB0939

)

Page 3

Power Transistor 2SB0939, 2SB0939A

—t

–1

th(t)

(1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

1010

110

Time t (s

)

˚C/W

( (t)

–1

Thermal resistance R

–2

–4

–3

–2

Page 4

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