Page 1
Po wer Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching
Complementary to 2SD1262 and 2SD1262A
Features
■
●
High foward current transfer ratio h
●
High-speed switching
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB939
2SB939A
2SB939
2SB939A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE1
Rank Q P
h
FE1
2000 to 5000
Symbol
2SB939
2SB939A
2SB939
2SB939A
4000 to 10000
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
C
Symbol
I
CBO
I
EBO
V
CEO
*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
FE
=25˚C)
C
Ratings
–60
–80
–60
–80
–7
–12
–8
45
1.3
150
–55 to +150
=25˚C)
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = –60V, IE = 0
VCB = –80V, IE = 0
VEB = –7V, IC = 0
IC = –30mA, IB = 0
VCE = –3V, IC = –4A
VCE = –3V, IC = –8A
IC = –4A, IB = –8mA
IC = –4A, IB = –8mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –4A, IB1 = –8mA, IB2 = 8mA,
VCC = –50V
Internal Connection
Unit: mm
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
–0.2
+0.4
3.0
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
max
–100
–100
4.4±0.5
0 to 0.4
Unit
µA
–2
mA
V
10000
14.7±0.5
10.0±0.310.5min.
10.0±0.3
2.0
4.4±0.5
2.0 1.5±0.1
123
8.5±0.2
6.0±0.5
5.08±0.5
213
8.5±0.2
6.0±0.3
5.08±0.5
min
–60
–80
2000
1.5max.
0.8±0.1
2.54±0.3
0.8±0.1
2.54±0.3
+0
–0.4
1.5
typ
500
–1.5
–2
15
0.5
2
1
C
B
E
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SB939, 2SB939A
PC—Ta IC—V
50
(1)
)
W
(
40
C
30
20
10
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
–100
V
(
–30
CE(sat)
–10
–3
–1
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P
=1.3W)
C
V
CE(sat)—IC
(1) IC/IB=250
(2) I
(3) I
T
C
C/IB
C/IB
=25˚C
=500
=1000
CE
–8
–7
)
–6
A
(
C
–5
–4
–3
–2
Collector current I
–1
0
0–5–4–1 –3–2
)
(3)
(2)
(1)
Collector to emitter voltage VCE (V
V
BE(sat)—IC
–100
)
V
(
–30
BE(sat)
–10
–3
–1
TC=–25˚C
25˚C
100˚C
=–2.0mA
I
B
T
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
IC/IB=500
=25˚C
C
– 0.2mA
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
Collector to emitter saturation voltage V
)
–100
)
V
(
–30
BE(sat)
–10
–3
–1
V
CE(sat)—IC
TC=100˚C
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
V
BE(sat)—IC
(1)
(2)
(3)
(1) I
(2) I
(3) I
T
25˚C
C
IC/IB=500
C/IB
C/IB
C/IB
=25˚C
–25˚C
)
=250
=500
=1000
– 0.3
– 0.1
Collector to emitter saturation voltage V
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
5
10
FE
TC=100˚C
4
10
3
10
hFE—I
–25˚C
)
C
VCE=–3V
25˚C
Forward current transfer ratio h
2
10
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
)
– 0.3
Base to emitter saturation voltage V
– 0.1
– 0.1 –1 –10– 0.3 –3
CB
IE=0
f=1MHz
=25˚C
T
C
)
Collector current IC (A
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
– 0.3
Base to emitter saturation voltage V
– 0.1
– 0.1 –1 –10– 0.3 –3
Collector current IC (A
Area of safe operation (ASO)
–100
–30
I
CP
)
–10
A
(
I
C
C
–3
–1
300ms
Collector current I
)
– 0.3
– 0.1
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
)
Non repetitive pulse
=25˚C
T
C
t=1ms
10ms
2SB939A
2SB939
)
2
Page 3
Po wer Transistors 2SB939, 2SB939A
R
—t
–1
10
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
3
1010
110
Time t (s
)
2
10
4
10
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
–2
10
3
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