Page 1
Po wer Transistors
2SB937, 2SB937A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1260 and 2SD1260A
Features
■
●
High foward current transfer ratio h
●
High-speed switching
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB937
2SB937A
2SB937
2SB937A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
2000 to 5000
Symbol
2SB937
2SB937A
2SB937
2SB937A
2SB937
2SB937A
4000 to 10000
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
FE
=25˚C)
C
Ratings
–60
–80
–60
–80
–5
–4
–2
35
1.3
150
–55 to +150
=25˚C)
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = –60V, IE = 0
VCB = –80V, IE = 0
VCE = –30V, IB = 0
VCE = –40V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –2A
VCE = –4V, IC = –2A
IC = –2A, IB = –8mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –2A, IB1 = –8mA, IB2 = 8mA
Internal Connection
Unit: mm
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
–0.2
+0.4
14.7±0.5
3.0
max
–1
–1
–2
–2
–2
4.4±0.5
0 to 0.4
Unit
mA
mA
mA
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
V
10.0±0.310.5min.
10.0±0.3
4.4±0.5
2.0 1.5±0.1
2.0
8.5±0.2
6.0±0.5
5.08±0.5
213
8.5±0.2
6.0±0.3
5.08±0.5
123
min
–60
–80
1.5max.
0.8±0.1
2.54±0.3
0.8±0.1
2.54±0.3
+0
typ
–0.4
1.5
1000
2000
C
B
E
20
0.4
1.5
0.5
10000
–2.8
–2.5
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SB937, 2SB937A
PC—Ta IC—V
50
)
W
(
40
C
(1)
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P
=1.3W)
C
(2)
(3)
V
CE(sat)—IC
TC=100˚C
–25˚C
25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
IC/IB=250
)
CE
–5
–4
)
A
(
C
–3
–2
Collector current I
–1
0
0–5–4–1 –3–2
TC=25˚C
IB=–2.0mA
Collector to emitter voltage VCE (V
hFE—I
C
5
10
FE
4
10
3
10
2
10
TC=100˚C
VCE=–4V
25˚C
–25˚C
Forward current transfer ratio h
10
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 4.0mA
– 0.2mA
– 0.1mA
)
IC—V
–10
–8
)
A
(
C
–6
TC=100˚C –25˚C
Base to emitter voltage VBE (V
Collector current I
)
–4
–2
0
0 –3.2– 0.8 –2.4–1.6
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
BE
CB
25˚C
VCE=–4V
IE=0
f=1MHz
T
=25˚C
C
)
)
Area of safe operation (ASO) R
–100
–30
)
–10
A
(
I
CP
C
–3
I
C
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000-3 –30 –300
Non repetitive pulse
=25˚C
T
C
t=1ms
300ms
10ms
2SB937
2SB937A
Collector to emitter voltage VCE (V
)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
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