Page 1
Po wer Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1253 and 2SD1253A
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
●
Low collector to emitter saturation voltage V
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB930
2SB930A
2SB930
2SB930A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE1
Rank Q P
h
FE1
70 to 150 120 to 250
Symbol
2SB930
2SB930A
2SB930
2SB930A
2SB930
2SB930A
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Symbol
I
CES
I
CEO
I
EBO
V
CEO
*
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
CE(sat)
=25˚C)
C
Ratings
–60
–80
–60
–80
–5
–8
–4
40
1.3
150
–55 to +150
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –4A, IB = – 0.4A
VCE = –10V, IC = – 0.1A, f = 1MHz
IC = –4A, IB1 = – 0.4A, IB2 = 0.4A
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
10.0±0.310.5min.
10.0±0.3
2.0
4.4±0.5
2.0 1.5±0.1
123
8.5±0.2
6.0±0.5
5.08±0.5
213
8.5±0.2
6.0±0.3
5.08±0.5
min
–60
–80
70
15
1.5max.
0.8±0.1
2.54±0.3
0.8±0.1
2.54±0.3
–0.4
+0
1.5
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
typ
max
–400
–400
–700
–700
–1.5
20
0.2
0.5
0.2
Unit: mm
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
–0.2
+0.4
3.0
4.4±0.5
0 to 0.4
Unit
µA
µA
–1
mA
V
250
–2
V
V
MHz
µs
µs
µs
14.7±0.5
1
Page 2
Po wer Transistors 2SB930, 2SB930A
PC—Ta IC—V
50
)
45
W
(
40
C
(1)
35
30
25
20
15
10
(2)
5
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P
=1.3W)
C
V
CE(sat)—IC
25˚C
TC=100˚C
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
IC/IB=10
)
CE
–6
–5
)
A
(
–4
C
–3
–2
IB=–120mA
–100mA
–80mA
Collector current I
–1
0
0 –12–10–8–2 –6–4
Collector to emitter voltage VCE (V
hFE—I
C
10000
3000
FE
1000
300
TC=100˚C
100
30
10
Forward current transfer ratio h
– 0.01
–25˚C
3
1
– 0.1 –1 –10
– 0.03
VCE=–4V
25˚C
– 0.3 –3
Collector current IC (A
TC=25˚C
–60mA
–40mA
–20mA
–10mA
–8mA
–5mA
)
–10
–8
)
A
(
C
–6
–4
Collector current I
–2
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
3
1
– 0.01
IC—V
BE
V
25˚C
TC=100˚C –25˚C
fT—I
C
VCE=–5V
f=1MHz
T
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
CE
=25˚C
C
=–4V
)
)
Area of safe operation (ASO) R
–100
–30
)
I
CP
–10
A
(
C
I
–3
C
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
10ms
300ms
Non repetitive pulse
=25˚C
T
C
t=1ms
Collector to emitter voltage VCE (V
)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
Loading...