Page 1
Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SD661 and 2SD661A
Unit: mm
Features
■
●
Low noise voltage NV.
●
High foward current transfer ratio hFE.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB745
2SB745A
2SB745
2SB745A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–35
–55
–35
–55
–5
–200
–50
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
0.4
1.0±0.1
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
1.5 R0.9
R0.9
R0.7
0.85
0.55±0.1 0.45±0.05
2.5 2.5
2.5±0.1
1.0
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
1.0
4.1±0.2 4.5±0.1
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SB745
2SB745A
2SB745
2SB745A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*
hFE Rank classification
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE
f
T
NV
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
Conditions
VCB = –10V, IE = 0
VCE = –10V, IB = 0
min
typ
max
–100
–1
Unit
nA
µA
–35
IC = –10µA, IE = 0
V
–55
–35
IC = –2mA, IB = 0
V
–55
IE = –10µA, IC = 0
*
VCB = –5V, IE = 2mA
IC = –100mA, IB = –10mA
VCE = –1V, IC = –100mA
VCB = –5V, IE = 2mA, f = 200MHz
–5
180
– 0.7
150
700
– 0.6
–1
V
V
V
MHz
VCE = –10V, IC = –1mA, GV = 80dB
150
mV
Rg = 100kΩ, Function = FLAT
1
Page 2
Transistor 2SB745, 2SB745A
PC — Ta IC — V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–800
–700
–600
)
µA
(
–500
B
–400
IB — V
BE
VCE=–5V
Ta=25˚C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
IC — V
–120
–100
)
mA
(
C
–80
–60
Ta=75˚C
25˚C
–25˚C
Ta=25˚C
IB=–350µA
–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
BE
VCE=–5V
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
)
)
–100
V
(
–30
CE(sat)
–10
0
0– 0.5– 0.4– 0.1 – 0.3– 0.2
–3
–1
IC — I
B
VCE=–5V
Ta=25˚C
Base current IB (mA
V
— I
CE(sat)
C
)
IC/IB=10
–300
Base current I
–200
–100
0
0 –1.0– 0.8– 0.2 – 0.6– 0.4
Base to emitter voltage VBE (V
hFE — I
600
FE
500
Ta=75˚C
400
300
200
100
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
25˚C
–25˚C
C
VCE=–5V
Collector current IC (mA
–40
Collector current I
–20
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
)
Base to emitter voltage VBE (V
fT — I
E
500
450
)
400
MHz
(
350
T
300
250
200
150
100
Transition frequency f
50
0
0.1 1 10 1000.3 3 30
Emitter current IE (mA
VCB=–5V
Ta=25˚C
)
)
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 – 1 –10 –100– 0.3 –3 –30
Collector current IC (mA
Cob — V
20
)
18
pF
(
16
ob
14
12
10
8
6
4
2
Collector output capacitance C
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
25˚C
CB
Ta=75˚C
–25˚C
IE=0
f=1MHz
Ta=25˚C
)
)
2
Page 3
Transistor
2SB745, 2SB745A
NV — V
160
140
)
120
mV
(
100
80
60
40
Noise voltage NV
20
0
Rg=100kΩ
22kΩ
4.7kΩ
–1 –3 –10 –30 –100
CE
IC=–1mA
=80dB
G
V
Function=FLAT
Collector to emitter voltage VCE (V
NV — I
300
240
)
mV
(
180
120
Noise voltage NV
60
0
– 0.01 – 0.03 – 0.1 – 0.3 –1
C
VCE=–10V
=80dB
G
V
Function=RIAA
Rg=100kΩ
Collector current IC (mA
22kΩ
4.7kΩ
NV — V
300
240
)
mV
(
180
120
Noise voltage NV
60
)
Rg=100kΩ
22kΩ
4.7kΩ
0
–1 –3 –10 –30 –100
Collector to emitter voltage VCE (V
NV — R
160
140
)
120
mV
(
100
80
60
40
Noise voltage NV
)
– 0.5mA
20
0
1 3 10 30 100
Signal source resistance Rg (kΩ
IC=–1mA
CE
IC=–1mA
=80dB
G
V
Function=RIAA
g
VCE=–10V
=80dB
G
V
Function=FLAT
– 0.1mA
160
140
)
120
mV
(
100
Noise voltage NV
)
300
240
)
mV
(
180
120
Noise voltage NV
)
80
60
40
20
0
– 0.01 – 0.03 – 0.1 – 0.3 –1
60
0
1 3 10 30 100
Signal source resistance Rg (kΩ
NV — I
C
VCE=–10V
=80dB
G
V
Function=FLAT
Rg=100kΩ
22kΩ
4.7kΩ
Collector current IC (mA
NV — R
– 0.5mA
IC=–2mA
g
VCE=–10V
=80dB
G
V
Function=RIAA
– 0.1mA
)
)
3
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