Page 1
Transistor
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
2SB709A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD601A
Features
■
●
High foward current transfer ratio hFE.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–45
–45
–7
–200
–100
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
hFE Rank classification
Rank Q R S
h
FE
Marking Symbol BQ BR BS
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
f
T
C
ob
VCB = –20V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
Conditions
160 ~ 260 210 ~ 340 290 ~ 460
min
–45
–45
–7
160
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
µA
µA
V
V
V
V
MHz
pF
1
Page 2
Transistor
2SB709A
PC — Ta IC — V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IB — V
BE
–400
–350
–300
)
µA
(
–250
B
–200
–150
Base current I
–100
–50
0
0 –1.8– 0.6 –1.2
Base to emitter voltage VBE (V
VCE=–5V
Ta=25˚C
CE
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
IC — V
–240
–200
)
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
Ta=75˚C
0 –2.0–1.6– 0.4 –1.2– 0.8
Base to emitter voltage VBE (V
Ta=25˚C
IB=–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
BE
VCE=–5V
25˚C
–25˚C
)
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
0
0 –450–150 –300
)
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
Collector to emitter saturation voltage V
–1 –10 –100 –1000–3 –30 –300
IC — I
B
VCE=–5V
Ta=25˚C
Base current IB (µA
V
— I
CE(sat)
25˚C
C
Ta=75˚C
–25˚C
Collector current IC (mA
)
IC/IB=10
)
hFE — I
C
600
FE
500
400
Ta=75˚C
300
200
100
Forward current transfer ratio h
25˚C
–25˚C
0
–1 –10 –100 –1000–3 –30 –300
Collector current IC (mA
2
VCE=–10V
fT — I
E
160
VCB=–10V
Ta=25˚C
140
)
MHz
120
(
T
100
80
60
40
Transition frequency f
20
0
0.1 1 10 1000.3 3 30
)
Emitter current IE (mA
)
8
)
pF
7
(
ob
6
5
4
3
2
1
Collector output capacitance C
0
Cob — V
–1 –3 –10 –30 –100
CB
IE=0
f=1MHz
Ta=25˚C
Collector to base voltage VCB (V
)
Page 3
Transistor
2SB709A
NF — I
6
5
)
dB
(
4
3
2
Noise figure NF
1
0
0.01 0.1 1 100.03 0.3 3
Emitter current IE (mA
h Parameter — V
300
100
30
E
VCB=–5V
f=1kHz
R
=2kΩ
g
Ta=25˚C
)
NF — I
E
20
VCB=–5V
=50kΩ
R
g
18
Ta=25˚C
16
)
14
dB
(
12
10
8
6
Noise figure NF
4
2
0
0.1 0.3 1 3 10
f=100Hz
1kHz
10kHz
Emitter current IE (mA
h Parameter
)
h Parameter — I
300
100
30
10
3
1
0.1 0.3 1 3 10
hre (✕10–4)
h
fe
hoe (µS)
hie (kΩ)
E
VCE=–5V
f=270Hz
Ta=25˚C
Emitter current IE (mA
)
CE
IE=2mA
f=270Hz
h
Ta=25˚C
fe
10
h Parameter
hre (✕10–4)
3
1
–1 –3 –10 –30 –100
hoe (µS)
hie (kΩ)
Collector to emitter voltage VCE (V
)
3
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