Datasheet 2SAR522M, 2SAR522EB Datasheet (ROHM)

General purpose transistor(-20V,-0.2A)

2SAR522M / 2SAR522EB / 2SAR522UB

Structure Dimensions (Unit : mm)
PNP silicon epitaxial planar transistor

Features

Complements the 2SCR522M / 2SCR522EB / 2SCR522UB.

Applications

Switch, LED driver

Packaging specifications

Package VMT3 EMT3F UMT3F

Type

2SAR522M
2SAR522EB
2SAR522UB

Packaging Type
Code
Basic ordering

unit (pieces)

Taping

T2L

8000

Taping

TL

3000

Taping

TL

3000

 Absolute maximum ratings (Ta=25C) Inner circuit

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power
dissipation

2SAR522M,2SAR522EB
2SAR522UB

Symbol

V
V
VEBO −5

ICP
P

Junction temperature
Storage temperature

∗1

Pw=1mS Single pulse

∗2

Each terminal mounted on a recommended land

T

CBO −20 V
CEO

I

C

D

T

stg

Limits

−20 V

∗1

150

∗2

200

j 150

−55 to +150 °C

Unit

V
mA−200
mA−400

mW
mW

°C

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance

BV
BV
BV

I
I

V

CE(sat)

h

Cob

CBO
EBO

f

CEO
CBO
EBO

FE
T

−

20

−

20

−

−

−

−

120

−

−

−

−

5

−

−

−

−

0.12

−

350

3

−

−

−

560

−

−

−

0.1

0.1

0.30

−

−

VMT3

EMT3F

UMT3F

MHz

V
V
V

μA
μA

V

−

pF

0.4250.425

2.1

1.25

(3)

(2)

Abbreviated symbol : PC

(3)

(1) (2)

Abbreviated symbol : PC

2.0

0.32
(3)

(1) (2)

0.65 0.65

1.3

Abbreviated symbol : PC

(1)

C

=

−

1mA

I
I

C

=

−

50μA

E

=

−

50μA

I

CB

=

−

V

EB

=

−

V
I

C

=

−

100mA, I

CE

=

−

V
V

CE

=

−

V

CB

=

−

0.9

0.13

(1) Base
(2) Emitter
(3) Collector

20V
5V

B

=

2V, I

C

=

−

1mA
10V, IE=10mA, f=100MHz
10V, IE=0A, f=1MHz

0.530.53

−

10mA

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2009 ROHM Co., Ltd. All rights reserved.

2010.09 - Rev.A

Data Sheet 2SAR522M / 2SAR522EB / 2SAR522UB

Electrical characteristics curves

B=1.0mA

I

I

-1000

C (mA)

-100

-10

VCE =2V

Ta=125°C

25°C

-55°C

-100

-1

-0.1

COLLECTOR CURRENT : I

-0.01

COLLECTOR CURRENT : IC (mA)

0 -0.2 -0.4 -0.6 -0.8 -1

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE :

-1

Ta=25

°C

IC/I

B = 20/1

IC/I

CE(sat) (V)

B =10/1

-0.1

VOLTAGE : V

COLLECTOR SATURATION

-0.01

CE(sat) (V)

-0.1

VOLTAGE : V

COLLECTOR SATURATION

-0.01

-1 -10 -100 -1000

COLLECTOR CURRENT : IC (mA)

B=0.9mA

-80

-60

-40

-20

0

0 -1-2-3-4-5

-1

IC/IB= 10/1

Ta=125°C

25°C

-55°C

-1 -10 -100 -1000

COLLECTOR CURRENT : I

I

B=0.8mA

CE (V)

V

Ta=25

C (mA)

°C

B=0.7mA

I

I

B=0.6mA

I

B=0.5mA

I

B=0.4mA

I

B=0.3mA

IB=0.2mA

I

B=0.1mA

I

B=0mA

1000

FE

Ta=125°C

DC CURENT GAIN : h

10

25°C

-55°C

-0.1 -1 -10 -100 -1000

COLLECTOR CURRENT : I

1000

VCE = 10V

Ta=25

(MHz)

T

°C

100

10

TRANSITION FREQUENCY :f

-0.1 -1 -10 -100 -1000

EMITTER CURRENT : I

VCE=2V

C (mA)

E (mA)

100

10

Cob

Cib (pF)

Cob (pF)

1

Ta=25

°C

f=1MHz

I

E=0

I

C=0

0.1

-0.01 -0.1 -1 -10 -100

COLLECTOR TO BASE VOLTAGE : V

EMITTER TO BASE VOLTAGE : V

Cib

CB (V)

EB(V)

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2009 ROHM Co., Ltd. All rights reserved.

2010.09 - Rev.A

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