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General purpose transistor(-20V,-0.2A)
2SAR522M / 2SAR522EB / 2SAR522UB
Structure Dimensions (Unit : mm)
PNP silicon epitaxial planar transistor
Features
Complements the 2SCR522M / 2SCR522EB / 2SCR522UB.
Applications
Switch, LED driver
Packaging specifications
Package VMT3 EMT3F UMT3F
Type
2SAR522M
2SAR522EB
2SAR522UB
Packaging Type
Code
Basic ordering
unit (pieces)
Taping
T2L
8000
Taping
TL
3000
Taping
TL
3000
Absolute maximum ratings (Ta=25C) Inner circuit
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power
dissipation
2SAR522M,2SAR522EB
2SAR522UB
Symbol
V
V
VEBO −5
ICP
P
Junction temperature
Storage temperature
∗1
Pw=1mS Single pulse
∗2
Each terminal mounted on a recommended land
T
CBO −20 V
CEO
I
C
D
T
stg
Limits
−20 V
∗1
150
∗2
200
j 150
−55 to +150 °C
Unit
V
mA−200
mA−400
mW
mW
°C
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
BV
BV
BV
I
I
V
CE(sat)
h
Cob
CBO
EBO
f
CEO
CBO
EBO
FE
T
−
20
−
20
−
−
−
−
120
−
−
−
−
5
−
−
−
−
0.12
−
350
3
−
−
−
560
−
−
−
0.1
0.1
0.30
−
−
VMT3
EMT3F
UMT3F
MHz
V
V
V
μA
μA
V
−
pF
0.4250.425
2.1
1.25
(3)
(2)
Abbreviated symbol : PC
(3)
(1) (2)
Abbreviated symbol : PC
2.0
0.32
(3)
(1) (2)
0.65 0.65
1.3
Abbreviated symbol : PC
(1)
C
=
−
1mA
I
I
C
=
−
50μA
E
=
−
50μA
I
CB
=
−
V
EB
=
−
V
I
C
=
−
100mA, I
CE
=
−
V
V
CE
=
−
V
CB
=
−
0.9
0.13
(1) Base
(2) Emitter
(3) Collector
20V
5V
B
=
2V, I
C
=
−
1mA
10V, IE=10mA, f=100MHz
10V, IE=0A, f=1MHz
0.530.53
−
10mA
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2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
Page 2
Data Sheet 2SAR522M / 2SAR522EB / 2SAR522UB
Electrical characteristics curves
B=1.0mA
I
I
-1000
C (mA)
-100
-10
VCE =2V
Ta=125°C
25°C
-55°C
-100
-1
-0.1
COLLECTOR CURRENT : I
-0.01
COLLECTOR CURRENT : IC (mA)
0 -0.2 -0.4 -0.6 -0.8 -1
BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE :
-1
Ta=25
°C
IC/I
B = 20/1
IC/I
CE(sat) (V)
B =10/1
-0.1
VOLTAGE : V
COLLECTOR SATURATION
-0.01
CE(sat) (V)
-0.1
VOLTAGE : V
COLLECTOR SATURATION
-0.01
-1 -10 -100 -1000
COLLECTOR CURRENT : IC (mA)
B=0.9mA
-80
-60
-40
-20
0
0 -1-2-3-4-5
-1
IC/IB= 10/1
Ta=125°C
25°C
-55°C
-1 -10 -100 -1000
COLLECTOR CURRENT : I
I
B=0.8mA
CE (V)
V
Ta=25
C (mA)
°C
B=0.7mA
I
I
B=0.6mA
I
B=0.5mA
I
B=0.4mA
I
B=0.3mA
IB=0.2mA
I
B=0.1mA
I
B=0mA
1000
FE
Ta=125°C
DC CURENT GAIN : h
10
25°C
-55°C
-0.1 -1 -10 -100 -1000
COLLECTOR CURRENT : I
1000
VCE = 10V
Ta=25
(MHz)
T
°C
100
10
TRANSITION FREQUENCY :f
-0.1 -1 -10 -100 -1000
EMITTER CURRENT : I
VCE=2V
C (mA)
E (mA)
100
10
Cob
Cib (pF)
Cob (pF)
1
Ta=25
°C
f=1MHz
I
E=0
I
C=0
0.1
-0.01 -0.1 -1 -10 -100
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Cib
CB (V)
EB(V)
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2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
Page 3
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R1010
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