Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA981
DESCRIPTION
·High Power Dissipation: P
= 80W(Max.)@TC=25℃
C
·Collector-Emitter Breakdown Voltage: V
(BR)CEO
·Complement to Type 2SC2261
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
= -120V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -8 A
IB Base Current-Continuous -3 A
PC
Tj Junction Temperature 150
T
stg
Collector-Base Voltage -120 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -6 V
Collector Power Dissipation
=25℃
@T
C
Storage Temperature -65~150
80 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA981
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 -120 V
(BR)CEO
V
CE
(sat)
I
CBO
I
EBO
h
FE
Collector-Emitter Saturation Voltage I
Collector Cutoff Current VCB= -120V; IE= 0 -1.0 mA
Emitter Cutoff Current VEB= -6V; IC= 0 -1.0 mA
DC Current Gain IC= -3A; VCE= -4V 30
= -3A; IB= -0.3A -1.5 V
C
fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V 20 MHz
Switching times
tr
t
stg
Rise Time 0.85
I
= -3A ,RL= 4Ω, VCC= -12V
Storage Time 2.0
C
= -0.2A; IB2= 0.1A
I
B1
μs
μs
tf
Fall Time
isc Website：www.iscsemi.cn
μs
0.3
Loading...