Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA969
DESCRIPTION
·With TO-66 package
·Complement to type 2SC2239
·High breakdown votage
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
PINNING(See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
E
T
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -5 V
Collector current -1.5 A
Emitter current 1.5 A
Total power dissipation TC=25℃ 25 W
℃)
Open emitter -160 V
Open base -160 V
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA969
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
I
CBO
I
EBO
h
C
f
BE
FE
ob
T
Collector-emitter breakdown voltage IC=-10mA; IB=0 -160 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-500mA; IB=-50mA B -1.5 V
Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V
Collector cut-off current VCB=-160V ;IE=0 -1.0
Emitter cut-off current VEB=-5V; IC=0 -1.0
DC current gain IC=-100mA ; VCE=-5V 70 240
Output capacitance IE=0 ; VCB=-10V,f=1MHz 30 pF
Transition frequency IC=-100mA ; VCE=10V 100 MHz
hFE Classifications
μA
μA
O Y
70-140 120-240
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA969
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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