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Power Transistors
2SA0963 (2SA963)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC2209
■ Features
• Large collector power dissipation P
• Output of 4 W to 5 W can be obtained by a complementary pair with
2SC2209
C
■ Absolute Maximum Ratings Ta = 25°C
120°
7.5
+0.5
–0.1
±0.2
2.3
±0.1
1.9
±0.3
3.8
±0.5
11.0
±1.0
16.0
Unit: mm
2.9
±0.2
±0.1
3.05
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation
*
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
P
C
C
j
stg
−50 V
−40 V
−5V
−1.5 A
−3A
10 W
150 °C
−55 to +150 °C
0.75
±0.1
4.6
±0.2
123
2.3
0.5
±0.1
±0.2
0.5
±0.1
1.26
±0.1
1: Emitter
2: Collector
TO-126A-A1 Package
3: Base
Note)*: TC = 25°C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
CBOIC
CEOIC
I
CBO
I
CEO
I
EBO
h
FE
CE(sat)IC
BE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
h
FE
80 to 160 120 to 220
= −1 mA, IE = 0 −50 V
= −2 mA, IB = 0 −40 V
VCB = −20 V, IE = 0 −1 µA
VCE = −10 V, IB = 0 −100 µA
VEB = −5 V, IC = 0 −10 µA
VCE = −5 V, IC = −1 A 80 220
= −1.5 A, IB = − 0.15 A −1.0 V
= −2 A, IB = − 0.2 A −1.5 V
VCB = −5 V, IE = 0.5 A, f = 200 MHz 150 MHz
T
VCB = −5 V, IE = 0, f = 1 MHz 70 pF
ob
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2003 SJD00006BED
1
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2SA0963
PC T
12
10
(W)
C
8
6
4
2
Collector power dissipation P
0
0 20040 80 160120
a
Ambient temperature Ta (°C)
V
I
(V)
BE(sat)
− 0.1
−10
BE(sat)
−1
TC = −25°C
C
100°C
25°C
Base-emitter saturation voltage V
− 0.01
− 0.01 −1− 0.1
Collector current IC (A)
IC / IB = 10
IC V
−4.0
−3.5
−3.0
(A)
C
−2.5
−2.0
−1.5
Collector current I
− 1.0
− 0.5
0
0 −10−2 −4 −8−6
CE
Collector-emitter voltage VCE (V)
hFE I
C
1
000
FE
100
10
TC = 100°C
−25°C
Forward current transfer ratio h
1
− 0.01 −1− 0.1
Collector current IC (A)
TC = 25°C
IB = −40 mA
−35 mA
−30 mA
−25 mA
−20 mA
−15 mA
−10 mA
−5 mA
VCE = −5 V
25°C
V
I
CE(sat)
−10
(V)
CE(sat)
−1
TC = 100°C
− 0.1
25°C
Collector-emitter saturation voltage V
− 0.01
− 0.01
− 0.1 −1
C
IC / IB = 10
−25°C
Collector current IC (A)
fT I
240
200
(MHz)
160
T
120
80
Transition frequency f
40
0
0.01 0.1 1 10
E
VCB = −5 V
f = 200 MHz
T
C
= 25°C
Emitter current IE (A)
Cob V
140
(pF)
ob
C
120
100
80
60
40
20
Collector output capacitance
(Common base, input open circuited)
0
−1 −10 −100
CB
Collector-base voltage VCB (V)
2
IE = 0
f = 1 MHz
= 25°C
T
C
V
R
−60
−50
(V)
CER
V
−40
−30
−20
−10
Collector-emitter voltage
(Resistor between B and E)
0
0.001 0.01 0.1 1 10
CER
BE
Base-emitter resistance RBE (kΩ)
SJD00006BED
TC = 25°C
)
a
(T
CEO
I
= 25°C)
(T
I
1
a
CEO
000
100
10
I
T
CEO
1
0 12020 10040 8060
Ambient temperature Ta (°C)
a
VCE = −12 V
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Safe operation area
−10
I
CP
I
C
−1
(A)
C
− 0.1
Collector current I
− 0.01
− 0.001
− 0.1
−1 −10 −100
Collector-emitter voltage VCE (V)
t = 1 s
Single pulse
= 25°C
T
C
t = 10 ms
2SA0963
SJD00006BED
3
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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