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Elektronische Bauelemente
FEATURES
1W output applications
Complementary to 2SC2120
CLASSIFICATION OF h
Product-Rank 2SA950-O 2SA950-Y
Range 100-200 160-320
FE (1)
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
2SA950
-0.8A , -35V
TO-92
G
K
H
Emitte
Collector
J
A
D
B
CE
F
Base
Millimete
REF.
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 J 2.42 2.66
K 0.36 0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Rating Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC -0.8 A
Collector Power Dissipation PC 600 mW
Junction, Storage Temperature TJ, T
= 25°C unless otherwise specified)
A
-35 V
CBO
-30 V
CEO
-5 V
EBO
150, -55~150 °C
STG
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min Typ Max Unit Test condition
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain
Collector to Emitter Saturation Voltage V
Emitter to Base Voltage VBE -0.5 - -0.8 V VCE= -1V, IC= -10mA
Transition Frequency fT - 120 - MHz VCE= -5V, IC= -10mA
Collector Output Capacitance Cob - 19 - pF VCB= -10V, IE=0, f=1MHz
= 25°C unless otherwise specified)
A
-35 - - V IC= -0.1mA, IE=0
(BR)CBO
-30 - - V IC= -10mA, IB=0
(BR)CEO
-5 - - V IE= -0.1mA, IC=0
(BR)EBO
- - -0.1 μA VCB= -35V, IE=0
CBO
- - -0.1 μA VEB= -5V, IC=0
EBO
h
100 - 320
FE (1)
h
35 - - VCE= -1V, IC= -700mA
FE (2)
- - -0.7 V IC= -500mA, IB= -20mA
CE(sat)
VCE= -1V, IC= -100mA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Feb-2011 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVE
2SA950
PNP Plastic Encapsulated Transistor
-0.8A , -35V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Feb-2011 Rev. A Page 2 of 2
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