Page 1
2SA1037AK / 2SA1576A / 2SA1774 /
Transistors
2SA2029 / 2SA933AS
General Purpose Transistor
(−50V, −0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS
!Features
1) Excellent h
linearity.
FE
2) Complements the 2SC2412K /
2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S.
!!!!Structure
Epitaxial planar type.
PNP silicon transistor
!!!!External dimensions (Units : mm)
2SA1037AK
)
1
(
1.9
2.9
)
2
)
(
3
0.95 0.95
(
0.4
1.6
2.8
0to0.1
1.1
0.8
(1) Emitter
(2) Base
(3) Collector
0.15
0.3to0.6
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : F ∗
2SA1774
0.2
(1)
0.3
0.15
0.1Min.
ROHM : EMT3
EIAJ : SC-75A
(2)
(3)
0.8
1.6
0to0.1
0.50.5
0.2
0.7
0.55
(1) Emitter
(2) Base
(3) Collecto
1.6
1.0
Abbreviated symbol : F ∗ Abbreviated symbol : F ∗
2SA933AS
3
)
15Min.
(
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
2SA1576A
ROHM : UMT3
EIAJ : SC-70
2SA2029
ROHM : VMT3
EIAJ :
42
3Min.
0.45
0.45
2.5
0.5
5
Taping specifications
(1) Emitter
(2) Collector
(3) Base
)
1
(
0.65
)
2
1.3
)
(
3
(
1.25
2.1
0to0.1
0.65
0.2
0.9
0.7
(1) Emitter
(2) Base
(3) Collector
0.3
0.15
0.1to0.4
Each lead has same dimensions
Abbreviated symbol : F ∗
1.2
0.80.2
0.2
(2)
1.2
0.8
0.40.4
0.32
(3)
(1)
0.22
0.5
0.15Max.
0.13
0to0.1
(1) Base
(2) Emitter
(3) Collector
2.0
∗ Denotes h
FE
Page 2
Transistors
!!!!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SA1037AK, 2SA1576A
Collector power
dissipation
Junction temperature
Storage temperature
2SA2029, 2SA1774
2SA933AS
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
−60 V
−50
−6
−0.15
0.2
0.15
0.3
150
55~+150
−
V
V
A (DC)
W
˚C
˚C
!!!!
Electrical characteristics
(Ta=25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
!!!!Packaging specifications and h
Package
Code
Basic ordering
unit (pieces)
h
Type
2SA1037AK
FE
QRS2SA2029
QRS
QRS2SA1576A
QRS2SA1774
QRS2SA933AS
Min.
Typ. Max. Unit Conditions
−6
−
−
VI
C
=
−50µA
−
−
V
C
=
−1µA
I
−
−
V
E
=
−50µA
I
−
−
−0.1
−
−
−0.1
−
−
−0.5
−
560
−
140
−
4.0
5.0
µA
CB
=
−60V
V
EB
=
µA
V
−
−
MHz
pF
−6V
V
I
C/IB
=
−50mA/−5mA
CE
=
−6V, I
V
CE
=
−12V, I
V
CB
=
−12V, I
V
C
=
−1mA
E
=
2mA, f=30MHz
E
=
0A, f=1MHz
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
−60
−50
120
Cob
FE
Taping
T146
3000
−
−
−
−
T106
3000
TL
3000
−−
−
−
−
−
−−−
T2L
8000
−
−
−
TP
5000
−
−
−
−
hFE values are classified as follows:
Item Q R S
FE
h
120~270 180~390 270~560
Page 3
Transistors
!!!!Electrical characteristic curves
−50
Ta=100˚C
25˚C
−20
mA)
COLLECTOR CURRENT : Ic (
−40˚C
−10
−5
−2
−1
−0.5
−0.2
−0.1
−0.2
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (
Fig.1 Grounded emitter propagation
characteristics
VCE=−6V
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
−10
Ta=25˚C
−8
mA)
(
C
−6
−4
−2
COLLECTOR CURRENT : I
−0.4
−0.8 −1.6 −2.0
V)
COLLECTOR TO MITTER VOLTAGE : VCE (
−35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5µA
I
B
−1.20
=0
Fig.2 Grounded emitter output
characteristics (I)
V)
−100
Ta=25˚C
)
−500
mA
(
−450
−80
C
−400
−350
−300
−60
−40
−20
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : VCE (
Fig.3 Grounded emitter output
characteristics (II)
−250
−200
−150
−100
−50µA
IB=0
−5−3 −4−2−1
V)
500
Ta=25˚C
FE
200
100
DC CURRENT GAIN : h
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (
VCE=−5V
−3V
−1V
mA)
Fig.4 DC current gain vs.
collector current (I)
−1
V)
(
CE(sat)
−0.5
−0.2
Ta=100˚C
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : V
25˚C
−40˚C
COLLECTOR CURRENT : IC (
lC/lB=10
mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
500
FE
200
100
50
DC CURRENT GAIN : h
−0.2 −0.5 −1 −2 −5 −10 −20 −50−100
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (
Fig.5 DC current gain vs.
1000
500
MHz)
(
T
200
100
50
TRANSITION FREQUENCY : f
collector current (II)
12 510
EMITTER CURRENT : I
Fig.8 Gain bandwidth product vs.
emitter current
VCE=−6V
mA)
Ta=25˚C
V
CE
E
(
mA)
−1
V)
(
CE(sat)
−0.5
−0.2
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : V
IC/IB=
50
20
10
COLLECTOR CURRENT : IC (
Ta=25˚C
mA)
Fig.6 Collector-emitter saturation
=−
12V
50 1000.5 20
voltage vs. collector current (I)
20
pF)
pF)
10
5
2
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
EMITTER TO BASE VOLTAGE : V
Cib
Cob
−0.5 −20
−1 −2 −5 −10
Ta=25˚C
f=1MHz
I
E
I
C
EB
=
=
(V)
0A
0A
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
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