Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA914
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SC1953
·Good linearity of h
·High V
CEO
APPLICATIONS
·For audio frequency power pre-amplifier
PINNING
PIN DESCRIPTION
FE
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute Maximun Ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -5 V
Collector current -50 mA
Collector current-Peak -100 mA
Collector power dissipation 1 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA914
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
C
FE
OB
f
T
Collector-emitter breakdown voltage IC=-0.1mA;IB=0 -150 V
Emitter-base breakdown voltage IE=-10μA ;IC=0 -5 V
Collector-emitter saturation voltage IC=-30mA ;IB=-3mA -1.0 V
Collector cut-off current VCB=-100V; IE=0 -1 μA
Emitter cut-off current VEB=-5V; IC=0 -1 μA
DC current gain IC=-10mA ; VCE=-5V 90 450
Output capacitance IE=0 ; VCB=-10V;f=1MHz 5 pF
Transition frequency IE=10mA ; VCB=-10V 200 MHz
hFE Classifications
Q R S T
90-155 130-220 185-330 260-450
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA914
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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