Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA900
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Good Linearity of h
·Low Collector Saturation Voltage
·Complement to Type 2SC1568
APPLICATIONS
·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= -18V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -1 A
ICP Collector Current-Pulse -2 A
PC Collector Power Dissipation 1.2 W
TJ Junction Temperature 150
T
stg
Collector-Base Voltage -20 V
Collector-Emitter Voltage -18 V
Emitter-Base Voltage -5 V
℃
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA900
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -18 V
(BR)CEO
(BR)CBO
(BR)EBO
V
CE(sat)
V
BE(sat)
I
CBO
I
CEO
h
FE-1
h
FE-2
Collector-Base Breakdown Voltage IC= -10μA; IE= 0 -20 V
Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 -5 V
Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA -0.5 V
Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.2 V
Collector Cutoff Current VCB= -10V; IE= 0 -1 μA
Collector Cutoff Current VCE= -18V; IB= 0 -10 μA
DC Current Gain IC= -0.5A; VCE= -2V 90 470
DC Current Gain IC= -1.5A ; VCE= -2V 50
fT Current-Gain—Bandwidth Product IC= -50mA; VCE= -6V 200 MHz
COB Output Capacitance
I
=0; VCB= -6V, f
E
= 1MHz
test
40 pF
h
Classifications
FE-1
Q R S T U
90-155 130-210 180-280 250-360 330-470
isc Website：www.iscsemi.cn
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