Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA887
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1848
APPLICATIONS
·Medium power amplifier
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -70 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -5 V
Collector current -2 A
Collector current-peak -3 A
Collector power dissipation
℃)
Ta=25℃ 1.2
=25℃ 10
T
C
W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA887
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
h
FE-1
h
FE-2
I
CBO
I
CEO
I
EBO
Collector-emitter breakdown voltage IC=-10mA; IB=0 -50 V
Collector-base breakdown voltage IC=-1mA; IE=0 -70 V
Collector-emitter saturation voltage IC=-1A ;IB=-0.1A B -0.6 -1.2 V
Base-emitter saturation voltage IC=-2A ;IB=-0.2 A B -1.0 -1.5 V
DC current gain IC=-100mA ; VCE=-5V 30
DC current gain IC=-1A ; VCE=-5V 50 220
Collector cut-off current VCB=-40V; IE=0 -1.0
Collector cut-off current VCE=-20V; IB=0 -100
Emitter cut-off current VEB=-5V; IC=0 -10
μA
μA
μA
f
T
Transition frequency IE=0.5A ; VCB=-5V 150 MHz
h
Classifications
FE-2
P Q R
50-100 80-160 120-220
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA887
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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